M
Masaharu Kobayashi
Researcher at Stanford University
Publications - 19
Citations - 687
Masaharu Kobayashi is an academic researcher from Stanford University. The author has contributed to research in topics: Electron mobility & Gate dielectric. The author has an hindex of 13, co-authored 19 publications receiving 649 citations.
Papers
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Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application
TL;DR: In this paper, an ultrathin interfacial silicon nitride layer was added to the metal/SiN/Ge Schottky diode to suppress strong Fermi level pinning, which resulted in effective control of Schotty barrier height.
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Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack
Masaharu Kobayashi,Gaurav Thareja,Masato Ishibashi,Yun Sun,Peter Griffin,James P. McVittie,Piero Pianetta,Krishna C. Saraswat,Yoshio Nishi +8 more
TL;DR: In this paper, a slot-plane-antenna (SPA) high density radical oxidation was used to grow a metal-oxide-semiconductor (Al2O3) gate stack with a GeO2 interfacial layer.
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Contact engineering for organic semiconductor devices via Fermi level depinning at the metal-organic interface
TL;DR: In this paper, the authors present evidence and demonstration of Fermi-level depinning at the M/O interface by inserting an ultrathin interfacial insulator in between.
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High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts
Jia Feng,Gaurav Thareja,Masaharu Kobayashi,Shu-Lu Chen,Andrew Poon,Yun Bai,Peter B. Griffin,S. Simon Wong,Yoshio Nishi,James D. Plummer +9 more
TL;DR: In this article, a gate-all-around germanium-on-insulator (GeOI) p-MOSFET with plasma-nitrided Ge surface, Al2O3 high-k gate dielectric, and self-aligned NiGe contacts is presented.
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p-Channel Ge MOSFET by Selectively Heteroepitaxially Grown Ge on Si
TL;DR: In this paper, the authors successfully demonstrate Ge pMOSFET integrated on Si. In this process, Ge is grown selectively on Si on patterned SiO2 by heteroepitaxy, and pMosFET is fabricated with gate dielectric stack consisting of thin GeO2 and Al2O3 and Al metal gate electrode.