Masahiro Orita

TL;DR: In this paper, a bilayer film composed of an extremely thin metallic copper layer and an amorphous LaCuOS layer at 1000 ˚C was used to grow a wide gap p-type semiconductor, which exhibited relatively intense ultraviolet emission associated with excitons at room temperature, confirming the high crystal quality of the films.

TL;DR: In this paper, a near-UV emitting diode was fabricated by successive heteroepitaxial growth of In 2 O 3 :Sn(ITO), n-electrode, n-ZnO, and p-SrCu 2 O 2 (SCO) on an extremely flat surface of yttria-stabilized ZrO 2 single crystalline substrate using a pulsed-laser deposition technique.

TL;DR: In this paper, single phase thin films of a layered oxysulfide, (La 1− x Sr x O)CuS ( x = 0, and 0.03), were prepared by r.f. sputtering technique followed by a post-annealing treatment in an evacuated silica tube containing a small amount of (LaO) CuS powder.

TL;DR: In this paper, the density of states (DOS) of the conduction band of amorphous polycrystalline semiconductors was investigated using inverse-photo-electron spectroscopy and molecular orbital calculation.

TL;DR: In this paper, the growth mechanism for a single-crystalline film of InGaO3(ZnO)5 (IGZO) on a (111)-oriented yttria-stabilized-zirconia substrate by reactive solid phase epitaxy was studied by high-resolution x-ray diffraction, transmission electron microscopy, and atomic force microscopy.