O
Osamu Ishiguro
Researcher at Toyota
Publications - 16
Citations - 558
Osamu Ishiguro is an academic researcher from Toyota. The author has contributed to research in topics: Schottky diode & Etching (microfabrication). The author has an hindex of 8, co-authored 16 publications receiving 507 citations.
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Journal ArticleDOI
GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
Masahito Kodama,Masahiro Sugimoto,Eiko Hayashi,Narumasa Soejima,Osamu Ishiguro,Masakazu Kanechika,Kenji Itoh,Hiroyuki Ueda,Tsutomu Uesugi,Tetsu Kachi +9 more
TL;DR: In this article, a novel method for fabricating trench structures on GaN was developed and a smooth non-polar (1100) plane was obtained by wet etching using tetramethylammonium hydroxide (TMAH) as the etchant.
Journal ArticleDOI
A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
Masakazu Kanechika,Masahiro Sugimoto,Narumasa Soejima,Hiroyuki Ueda,Osamu Ishiguro,Masahito Kodama,Eiko Hayashi,Kenji Itoh,Tsutomu Uesugi,Tetsu Kachi +9 more
TL;DR: In this article, a vertical insulated gate AlGaN/GaN heterojunction field effect transistor (HFET) was fabricated using a free-standing GaN substrate, which exhibited a specific on-resistance of as low as 2.6 mΩ·cm2 with a threshold voltage of -16 V.
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DLTS study of n-type GaN grown by MOCVD on GaN substrates
TL;DR: In this paper, two free-standing HVPE GaN substrates (A and B) were obtained from two different sources, obtained from different sources using DLTS for vertical Schottky diodes.
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Characterization of plasma etching damage on p-type GaN using Schottky diodes
TL;DR: In this article, the authors investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was observed.
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Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer
TL;DR: The redistribution behavior of Mg in a sequentially regrown GaN epilayer on a p-type doped GaN template was studied in this paper, where the insertion of a low-temperature (LT) AlN interlayer was effective to suppress the Mg redistribution in the GaN regrown layer.