Journal ArticleDOI
A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
Masakazu Kanechika,Masahiro Sugimoto,Narumasa Soejima,Hiroyuki Ueda,Osamu Ishiguro,Masahito Kodama,Eiko Hayashi,Kenji Itoh,Tsutomu Uesugi,Tetsu Kachi +9 more
TLDR
In this article, a vertical insulated gate AlGaN/GaN heterojunction field effect transistor (HFET) was fabricated using a free-standing GaN substrate, which exhibited a specific on-resistance of as low as 2.6 mΩ·cm2 with a threshold voltage of -16 V.Abstract:
We fabricated a vertical insulated gate AlGaN/GaN heterojunction field-effect transistor (HFET), using a free-standing GaN substrate. This HFET has apertures through which the electron current vertically flows. These apertures were formed by dry etching the p-GaN layer below the gate electrodes and regrowing n--GaN layer without mask. The HFET exhibited a specific on-resistance of as low as 2.6 mΩ·cm2 with a threshold voltage of -16 V. This HFET would be a prototype of a GaN-based high-power switching device.read more
Citations
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Journal ArticleDOI
Gallium nitride devices for power electronic applications
TL;DR: In this article, the authors discuss the properties of GaN that make it an attractive alternative to established silicon and emerging SiC power devices and present challenges and innovative solutions to creating enhancement-mode power switches.
Journal ArticleDOI
GaN Power Transistors on Si Substrates for Switching Applications
Nariaki Ikeda,Yuki Niiyama,Hiroshi Kambayashi,Yoshihiro Sato,Takehiko Nomura,Sadahiro Kato,Seikoh Yoshida +6 more
TL;DR: In this article, GaN power transistors on Si substrates for power switching application are reported, and current collapse phenomena are discussed for GaN-HFETs on Si substrate, resulting in suppression of the current collapse due to using the conducting Si substrate.
GaN Power Transistors on Si Substrates for Switching Applications Hybrid MOS-FET transistor devices with low on-resistance, high hold-voltages and high breakdown voltage promise to provide high-power, low-loss operation for switching applications.
Nariaki Ikeda,Yuki Niiyama,Hiroshi Kambayashi,Yoshihiro Sato,Takehiko Nomura,Sadahiro Kato,Seikoh Yoshida +6 more
TL;DR: A hybrid metal-oxide-semiconductor HFET structure is a promising candidate for obtaining devices with a lower on-resistance and a high breakdown voltage as well as one of the cost-effective solutions.
Journal ArticleDOI
Vertical Power p-n Diodes Based on Bulk GaN
TL;DR: In this article, vertical p-n diodes fabricated on pseudobulk low defect density GaN substrates are discussed, with drift layer thicknesses of 6 to 40 µm and net carrier electron concentrations of $4\times 10^{15}$ to $2.5 µm.
Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
TL;DR: In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.
References
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Journal ArticleDOI
AlGaN/GaN current aperture vertical electron transistors with regrown channels
TL;DR: AlGaN/GaN current aperture vertical electron transistors with regrown aperture and source regions have been fabricated and tested as discussed by the authors, and they achieve a maximum source-drain current of 750 mA/mm, an extrinsic transconductance of 120 mS/mm.
Journal ArticleDOI
In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology
Shugo Nitta,Yohei Yukawa,Yasuhiro Watanabe,Masayoshi Kosaki,Motoaki Iwaya,Shigeo Yamaguchi,Hiroshi Amano,Isamu Akasaki +7 more
TL;DR: In this article, the mass transport of GaN occurs at around 1100°C under NH 3 -containing atmosphere if a trench is artificially formed, while that of Al 0.1 Ga 0.9 N does not.