W
Wu Lu
Researcher at Ohio State University
Publications - 168
Citations - 4643
Wu Lu is an academic researcher from Ohio State University. The author has contributed to research in topics: Field-effect transistor & High-electron-mobility transistor. The author has an hindex of 33, co-authored 159 publications receiving 3856 citations. Previous affiliations of Wu Lu include Nanjing Medical University & Nanyang Technological University.
Papers
More filters
Journal ArticleDOI
Large-scale generation of functional mRNA-encapsulating exosomes via cellular nanoporation.
Zhaogang Yang,Zhaogang Yang,Junfeng Shi,Jing Xie,Yifan Wang,Jingyao Sun,Tongzheng Liu,Yarong Zhao,Xiuting Zhao,Xinmei Wang,Yifan Ma,Veysi Malkoc,Chi-Ling Chiang,Weiye Deng,Yuanxin Chen,Yuan Fu,Kwang J. Kwak,Yamin Fan,Chen Kang,Changcheng Yin,June Rhee,Paul Bertani,Jose Otero,Wu Lu,Kyuson Yun,Andrew S. Lee,Wen Jiang,Lesheng Teng,Betty Y.S. Kim,Betty Y.S. Kim,L. James Lee +30 more
TL;DR: In this article, a cellular-nanoporation method for the production of large quantities of exosomes containing therapeutic mRNAs and targeting peptides was reported, and the exosome-containing exosomal mRNA transcripts were shown to restore tumour-suppressor function, enhanced inhibition of tumour growth and increased survival.
Journal ArticleDOI
Nanochannel electroporation delivers precise amounts of biomolecules into living cells
Pouyan E. Boukany,Andrew Morss,Wei Ching Liao,Brian E. Henslee,Hyunchul Jung,Xulang Zhang,Bo Yu,Xinmei Wang,Yun Wu,Lei Li,Keliang Gao,Xin Hu,Xi Zhao,Orin Hemminger,Wu Lu,Gregory P. Lafyatis,L. James Lee +16 more
TL;DR: It is shown that nanochannel electroporation can deliver precise amounts of a variety of transfection agents into living cells, and is expected to have high-throughput delivery applications.
Journal ArticleDOI
AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise
TL;DR: In this paper, high performance AlGaN/GaN high electron mobility transistors (HEMTs) with 0.12 /spl mu/m gate-length have been fabricated on an insulating SiC substrate.
Journal ArticleDOI
Large Area Single Crystal (0001) Oriented MoS2 Thin Films
Masihhur R. Laskar,Lu Ma,ShanthaKumar K,Pil Sung Park,Sriram Krishnamoorthy,Digbijoy N. Nath,Wu Lu,Yiying Wu,Siddharth Rajan +8 more
TL;DR: In this article, chemical vapor deposition (CVD) can be used to achieve large area electronic grade single crystal Molybdenum Disulfide (MoS2) thin films with the highest mobility reported in CVD grown films so far.
Journal ArticleDOI
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
Vinit Kumar,Wu Lu,R. Schwindt,A. Kuliev,Grigory Simin,J. W. Yang,M. Asif Khan,Ilesanmi Adesida +7 more
TL;DR: In this article, the maximum drain current density as high as 1.23 A/mm and peak extrinsic transconductance of 314 mS/mm were reported for GaN-based HEMTs.