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Mathieu Rouviere

Researcher at STMicroelectronics

Publications -  27
Citations -  742

Mathieu Rouviere is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Photodetector & Silicon on insulator. The author has an hindex of 10, co-authored 27 publications receiving 716 citations. Previous affiliations of Mathieu Rouviere include University of Paris-Sud & Centre national de la recherche scientifique.

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Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

TL;DR: In this paper, the structural and optical properties of Ge-based photodetectors operating in the low loss windows (1.3-1.6 μm) of silica fibers are investigated.
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High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide

TL;DR: Design, fabrication and characterization of germanium on silicon photodetector integrated in SOI waveguide are reported, and a responsivity of 1 A/W and a -3 dB bandwidth of 25 GHz under 6 V bias have been obtained.
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Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55μm operation

TL;DR: In this article, the fabrication and characterization of interdigited metal-germanium on silicon metal photodetectors (metal-semiconductor-metal or MSM) for operation at both optical telecommunication wavelengths: 1.31 and 1.55μm.
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Integration of germanium waveguide photodetectors for intrachip optical interconnects

TL;DR: In this article, the main characteristics of germanium photodetectors integrated in silicon-on-insulator optical waveguides for intrachip optical interconnects are presented.
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UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si.

TL;DR: In this paper, the structural effects of single and cyclic thermal annealings on relaxed Ge epilayers on Si(0 0 1) were investigated, and the structural morphology of the films was studied ex situ by Rutherford back scattering spectrometry in channelling geometry (RBS-C), atomic force microscopy (AFM), and transmission electron microscopy.