M
Mathieu Rouviere
Researcher at STMicroelectronics
Publications - 27
Citations - 742
Mathieu Rouviere is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Photodetector & Silicon on insulator. The author has an hindex of 10, co-authored 27 publications receiving 716 citations. Previous affiliations of Mathieu Rouviere include University of Paris-Sud & Centre national de la recherche scientifique.
Papers
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Journal ArticleDOI
Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection
J.M. Hartmann,Alexandra Abbadie,A.M. Papon,P. Holliger,G. Rolland,T. Billon,Jean-Marc Fedeli,Mathieu Rouviere,Laurent Vivien,S. Laval +9 more
TL;DR: In this paper, the structural and optical properties of Ge-based photodetectors operating in the low loss windows (1.3-1.6 μm) of silica fibers are investigated.
Journal ArticleDOI
High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide
Laurent Vivien,Mathieu Rouviere,Jean-Marc Fedeli,Delphine Marris-Morini,Jean François Damlencourt,J. Mangeney,Paul Crozat,Loubna El Melhaoui,Eric Cassan,Xavier Le Roux,Daniel Pascal,Suzanne Laval +11 more
TL;DR: Design, fabrication and characterization of germanium on silicon photodetector integrated in SOI waveguide are reported, and a responsivity of 1 A/W and a -3 dB bandwidth of 25 GHz under 6 V bias have been obtained.
Journal ArticleDOI
Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55μm operation
Mathieu Rouviere,Laurent Vivien,X. Le Roux,J. Mangeney,P. Crozat,C. Hoarau,Eric Cassan,Daniel Pascal,S. Laval,J-M. Fedeli,Jean-Francois Damlencourt,J. M. Hartmann,S. Kolev +12 more
TL;DR: In this article, the fabrication and characterization of interdigited metal-germanium on silicon metal photodetectors (metal-semiconductor-metal or MSM) for operation at both optical telecommunication wavelengths: 1.31 and 1.55μm.
Journal ArticleDOI
Integration of germanium waveguide photodetectors for intrachip optical interconnects
Mathieu Rouviere,M. Halbwax,J.-L. Cercus,Eric Cassan,Laurent Vivien,Daniel Pascal,M. Heitzmann,Jean-Michel Hartmann,Suzanne Laval +8 more
TL;DR: In this article, the main characteristics of germanium photodetectors integrated in silicon-on-insulator optical waveguides for intrachip optical interconnects are presented.
Journal ArticleDOI
UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si.
M. Halbwax,Mathieu Rouviere,Mathieu Rouviere,Yunlin Jacques Zheng,Dominique Débarre,Lam H. Nguyen,J.-L. Cercus,C. Clerc,Vy Yam,S. Laval,Eric Cassan,Daniel Bouchier +11 more
TL;DR: In this paper, the structural effects of single and cyclic thermal annealings on relaxed Ge epilayers on Si(0 0 1) were investigated, and the structural morphology of the films was studied ex situ by Rutherford back scattering spectrometry in channelling geometry (RBS-C), atomic force microscopy (AFM), and transmission electron microscopy.