There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

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Electronic Transport In Mesoscopic Systems

Time-Frequency Analysis.

Antenna Theory And Design

The nephrotic syndrome

The proposed assembly comprises of 2 × 2 antenna elements with defected ground structure (DGS) to resonate at 5.8 GHz for WLAN application, where each antenna element excited by inset feeding technique. The proposed MIMO array has achieved - 10 dB bandwidth of 85 MHz with 36.5% reduction in antenna area with similar radiating element. Besides, the proposed design also achieved high radiation efficiency of 95% with a peak directivity of 11.94 dBi. The antenna resonates at the designated frequency with a minimum return loss of - 42dB. The results include parametric study by subtracting more slots from the ground and placed them in horizontal direction. The obtained antenna array can be used for WLAN application with low manufacturing cost.

DGS-Based Quad Element Planar Array for WLAN Application with Enhanced Performance

Free Space Optical (FSO) has a very good potential alternative solution to Radio Frequency (RF) to provide high terrestrial wireless communication. In tropical region, the only drawback of FSO is atmospheric attenuation due to mainly haze and rain. This study investigates the performance of FSO system over link distances that ranges between 9 km to 12 km as the average visibility in Kuala Lumpur, Malaysia is 10 km. Two models used to predict the atmospheric attenuation, namely Kruse model and modified Kruse model. These models are valid to predict the haze attenuation for visibilities that range between 9 to 12 km. The modified/corrected Kruse model shows some limitations in the prediction of haze attenuation over longer wavelength. However, the study indicates that attenuation due to haze is low, while air quality in Kuala Lumpur, Malaysia is acceptable. As the size of haze particles varies from 0.01 to 1 µm, the longer wavelength is preferable as 1550 nm to enhance FSO performance compared to 850 nm and 600 nm wavelengths. Thus, the longer wavelength is the optimal choice to enhance the FSO performance as it caused low scattering. 

Tropical Terrestrial Free Space Optical Link Performance Analysis

The performances of heterostructural devices are often limited by misfit dislocation. In this paper, a theoretical approach for misfit dislocation reduction of wurtzite InxGa1-xN/GaN is presented. The linear and exponential grading techniques have been modeled for the reduction of dislocation. An energy balance model has been taken into consideration and modified for wurtzite structure to evaluate the misfit dislocation density. The value of misfit dislocation has been reduced from 7.112×1010 cm-2 to 6.19×106 cm-2 and 7.039×1010 cm-2 to 6.121×106 cm-2 at the plane 1/3 {} and 1/3 {} respectively for linear grading. In case of exponential grading the dislocation density has been reduced to 2.762×105 cm-2 for both slip systems. Because of tapered grading coefficient a tapered dislocation profile has been reported in case of exponential grading technique. Finally, a comparative study has been shown among without graded, linear and exponential grading.

Misfit Dislocation Reduction of InxGa1-xN/GaN Heteroepitaxy Using Graded Layer

‘III-nitride’ semiconductor based light emitting diodes (LEDs) have completely transformed the lighting industry due to its unique optical and electrical properties, which leads to higher efficiency and brightness. However, electron leakages, poor hole injection, and efficiency droop significantly affect the electrical and optical properties of InGaN/GaN LEDs that leads to the poor power conversion efficiency. These problems can be effectively minimized by introducing an Electron Blocking Layer (EBL) in conventional LEDs. The objective of this work is to investigate the effect of EBL layer (i.e., Al x Ga l-x N) on dual wavelength InGaN/GaN LEDs with different Al compositions (x). Different compositions of AlxGal-xN have been used to study the electrical and optical properties of LEDs and find out their optimal design parameters by using APSYS simulation program. The simulation results suggested that the composition of Al of the EBL and properties of quantum well has significant effects on the optical and electrical properties of InGaN/GaN LEDs. The gradually increasing composition (from $x$ = 0 to 0.13) of the EBL shows large output power from the LED as it significantly reduces the electrons leakages of the device.

Effect of the electron blocking layer in dual-wavelength emission of InGaN/GaN MQW light-emitting diodes

The impact of recessed gate metal on the performance of double-gate junctionless MOSFET (DG-JLMOSFET) has been studied considering GaAs as channel material. The geometry of the gate metal is changed to obtain the best performance by recessing it to gate oxide for 1 nm vertically and extending it up to 9 nm horizontally on both sides. Changing the gate's geometrical shape and physical dimension, the leakage current is found to be reduced significantly for a fixed channel length of 10 nm. This results in a higher ION/IoFF ratio of ~ 1010 which in turn mitigates the drain induced barrier lowering (DIBL). The calculated results on various short channel effects (SCEs) indicate that the proposed model seems to have a greater drain current and a decreased subthreshold swing (SS) of 71 mV/Dec. The results of various figure of merits (FOMs) show that GaAs-based recessed gate DG-JLMOSFETs are extremely viable for the advancement of the upcoming nano-technology.

Md. Rafiqul Islam

Papers

DGS-Based Quad Element Planar Array for WLAN Application with Enhanced Performance

Tropical Terrestrial Free Space Optical Link Performance Analysis

Misfit Dislocation Reduction of InxGa1-xN/GaN Heteroepitaxy Using Graded Layer

Effect of the electron blocking layer in dual-wavelength emission of InGaN/GaN MQW light-emitting diodes

Effect of Recessed Gate Metal on Performance Analysis of GaAs Based DG-JLMOSFET