There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

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Electronic Transport In Mesoscopic Systems

Time-Frequency Analysis.

Antenna Theory And Design

The nephrotic syndrome

LoRaWAN wireless communication channels are often impacted by noise and interference over long-range causing loss of a received signal. One of the main drawbacks of using existing propagation models is less accurate as these models in designing the communication link are tailored to simplify the estimation. In this paper, an artificial intelligent real time path loss model is proposed. It is capable of processing complex variables over a short period of time. Providing it with enough data, the model is able to learn channel behavior and predict the path loss accurately. Results of the model are benchmarked against classical statistical curve fitting models where RMSE values are also compared and indicating that the artificial intelligent model has better accurate prediction. 

ANN-based LoRaWAN Channel Propagation Model

In this work, strained large area graphene is used in the channel of Graphene-FET (G-FET) to realize the G-FET in logic application. The strain dependent quantum confinement effect in terms of quantum capacitance is investigated and a drain current model is proposed under tight binding approximation. The influence of strain on the performance of G-FET as a function of gate voltage, channel length and oxide thickness is studied. The results obtained from the present study indicate that the performance of G-FET is highly influenced by the strain. It is also found that the strained G-FET satisfactorily meet the requirements for logic applications.

Performance of large area graphene FET considering the effect of strain

In this paper, InGaSb based n-MOSFET model is proposed under unstrained, and 0.7% and 1.7% compressive strained conditions. Using well known Silvacos's ATLAS device simulator the ID-VG, ID-VDS, mobility, subthreshold swing and threshold voltage characteristics are simulated and analyzed. The performance of the strained structure is found to be better then the unstrained structure. It also found that the device performances have strong temperature dependent. The propose device structure shows highest drain current and highest mobility compared to recently published experimental results for InGaSb-based p-MOSFET.

InGaSb based n-MOSFET: Modeling and performance analysis

The models for investigating the phase diagram of InGaN thin films have been anticipated by considering the effects of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. Total Gibb's free energy varies with Indium composition and thickness of the epitaxial thin film. The calculated results indicate that over critical thickness, energy of the films increases with increasing thickness. The phase diagrams of InGaN films grown on GaN substrate have been calculated. There is a small effect of surface energies of solid phases on the phase diagrams of epitaxial film. With increasing the thickness of InGaN films the wurtzite phase is found to be decreased. This is due to the increase of thickness, misfit dislocations and the commencing of phase separation. Accurate information of InGaN nano film is applicable for the innovation of III-nitride based nano-electronics system.

Theoretical investigation of Gibb's free energy and phase diagram for In x Ga 1−x N nano-film system

Among different types of antennas, the micro strip patch antennas (MPA) are the center of extensive research interest as the increasing demand for wireless applications are at its peak. To accommodate the need of space for different components in sleek handheld devices like the tablet PC, the MPA is one of the best options. In this paper various structures that are able to demonstrate the multiband characteristics are presented and the comparison of performance depending on the return loss, size are to be discussed along with a proposed design operational for GSM and LTE applications.

Md. Rafiqul Islam

Papers

ANN-based LoRaWAN Channel Propagation Model

Performance of large area graphene FET considering the effect of strain

InGaSb based n-MOSFET: Modeling and performance analysis

Theoretical investigation of Gibb's free energy and phase diagram for In x Ga 1−x N nano-film system

Design of Embedded Parallel Resonant Circuit Multiband Microstrip Patch Antenna for Tablet PC