Physical Review B

Journal of Applied physics,Vol.33 : 1962年に発表されたレオロジー関連の論文

Solid-state electronics

(IEEE Transactions on Electron Devices,36(12):2816-2820)Field-Drifting Resonant Tunneling Through a-Si:H/a-Sil-xCx:H Quantum Wells at Different Locations of the i-Layer of a p-i-n Structure

In this review the different concepts of nanoscale resistive switching memory devices are described and classified according to their I-V behaviour and the underlying physical switching mechanisms. By means of the most important representative devices, the current state of electrical performance characteristics is illuminated in-depth. Moreover, the ability of resistive switching devices to be integrated into state-of-the-art CMOS circuits under the additional consideration with a suitable selector device for memory array operation is assessed. From this analysis, and by factoring in the maturity of the different concepts, a ranking methodology for application of the nanoscale resistive switching memory devices in the memory landscape is derived. Finally, the suitability of the different device concepts for beyond pure memory applications, such as brain inspired and neuromorphic computational or logic in memory applications that strive to overcome the vanNeumann bottleneck, is discussed.

https://iopscience.iop.org/article/10.1088/1361-6528/ab2084/pdf

Nanoscale resistive switching memory devices: a review.

http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=2168&context=nanopub

Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits

To suppress the ambipolar behavior and improve RF performance in tunnel field-effect transistors (TFETs), a Z-shaped (ZS)-TFET is proposed. The proposed ZS-TFET is more scalable than other vertical band-to-band-based TFETs and provides higher ON-state current ( ${I} _{ {\mathrm{\scriptscriptstyle ON}}}$ ), larger ON/OFF current ratio ( ${I} _{ {\mathrm{\scriptscriptstyle ON}}}/{I} _{ {\mathrm{\scriptscriptstyle OFF}}}$ ) and lower subthreshold swing compared to conventional TFETs. These advantages stem from the tunneling junction in the ZS-TFET being perpendicular to the channel direction, which facilitates the formation of a relatively large tunneling junction area. The ZS body makes use of both vertical and horizontal fields while suppressing the lateral parasitic tunneling current. In addition, by using a ZS gate in the proposed device, the energy band diagram near the source is modulated to create an N+ source pocket which creates a downward band bending of the potential, similar to PNPN-like structures. Finally, the proposed structure significantly improves the analog/RF figure-of-merit.

A Novel PNPN-Like Z-Shaped Tunnel Field- Effect Transistor With Improved Ambipolar Behavior and RF Performance

Band gap size of armchair graphene nanoribbons (AGNRs) can be tuned by implementing topological antidotes or boron/nitride (BN) atoms at the middle of ribbons. By imposing such modulated patterns on certain regions of AGNRs, double barrier quantum well structures can be produced. According to this procedure, this paper proposes a new method for constructing resonant tunneling diodes (RTDs) by using AGNRs while the widths of the ribbons remain constant. Different structures of modulated AGNR-RTDs are constructed by introducing hexagonal antidotes, hexagonal BN doping atoms, and the combination of antidotes and BN doping atoms at the middle of pristine AGNRs. It is found that in general, antidote AGNR-RTDs present negative differential resistance with better performance in comparison with other modulated AGNR-RTDs. In addition, the effects of dimensional parameters such as the length of channel, the length of barrier, and the distance between antidotes on the performance of antidote AGNR-RTDs are investigated. It is extracted that the peak to valley ratio, power dissipation, and other properties can be modified by tuning the dimensional parameters to appropriate values. Numerical tight-binding model along with nonequilibrium Green’s function formalism is applied to study the electronic properties of devices.

Armchair Graphene Nanoribbon Resonant Tunneling Diodes Using Antidote and BN Doping

Modeling of lightly doped drain and source graphene nanoribbon field effect transistors

In this paper, the influence of ultra-scaled physical symmetrical contraction on electrical characteristics of ultra-thin silicon-on-insulator nanowires with circular gate-all-around structure is investigated by using a 3D Atlas numerical quantum simulator based on non-equilibrium green’s function formalism. It is demonstrated that local cross-section variation in a nanowire transistor results in the establishment of tunnel energy barriers at the source-channel and drain-channel junctions which change device physics and cause a transmission from a quantum wire (1-D) to a floating quantum dot nanowire (0-D) introducing a resonant tunneling nanowire FET (RT-NWFET) as an interesting concept of nanoscale MOSFETs. The barriers construct resonance energy levels in the channel region of nanowires because of the longitudinal confinement in three directions causing some fluctuation in I
 D–V
 GS characteristic. In addition, these barriers remarkably improve the subthreshold swing and minimize the ON/OFF-current ratio degradation at a low operation voltage of 0.5 V. As a result, RT-NWFETs are intrinsically preserved from drain–source tunneling and are an interesting candidate for developing the roadmap below 10 nm.

A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications

Mehdi Saremi

Papers

Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits

A Novel PNPN-Like Z-Shaped Tunnel Field- Effect Transistor With Improved Ambipolar Behavior and RF Performance

Armchair Graphene Nanoribbon Resonant Tunneling Diodes Using Antidote and BN Doping

Modeling of lightly doped drain and source graphene nanoribbon field effect transistors

A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications