M
Michael Andersson
Researcher at Chalmers University of Technology
Publications - 32
Citations - 955
Michael Andersson is an academic researcher from Chalmers University of Technology. The author has contributed to research in topics: Graphene & Field-effect transistor. The author has an hindex of 17, co-authored 31 publications receiving 829 citations. Previous affiliations of Michael Andersson include Medical Products Agency & Karolinska Institutet.
Papers
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Journal ArticleDOI
Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene.
Audrey Zak,Michael Andersson,Maris Bauer,Jonas Matukas,Alvydas Lisauskas,Alvydas Lisauskas,Hartmut G. Roskos,Jan Stake +7 more
TL;DR: This is the first time room-temperature direct detection has been demonstrated using CVD graphene, which introduces the potential for scalable, wafer-level production of graphene detectors.
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Increased reactivity to myelin oligodendrocyte glycoprotein peptides and epitope mapping in HLA DR2(15)+ multiple sclerosis.
Erik Wallström,Mohsen Khademi,Michael Andersson,Robert Weissert,Christopher Linington,Tomas Olsson +5 more
TL;DR: This is the first work detailing putative immunodominant T cell epitopes of MOG in DR2(15)+ MS patients, and the stimulatory property of this peptide was confirmed in additional MS patients where a peptide concentration‐dependent proliferative response was observed.
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A flexible graphene terahertz detector
TL;DR: In this paper, a flexible terahertz (THz) detector based on a graphene field effect transistor fabricated on a plastic substrate is presented, which reveals voltage responsivity above 2'V/W and estimated noise equivalent power (NEP) below 3 nW/Hz1/2 at 487'GHz.
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10 dB small-signal graphene FET amplifier
TL;DR: In this article, the realisation of a graphene FET microwave amplifier operating at 1 GHz, exhibiting a small-signal power gain of 10 dB and a noise figure of 6.4 dB, was reported.
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A 400-GHz Graphene FET Detector
TL;DR: In this article, a graphene field effect transistor (GFET) detector at 400 GHz with a maximum measured optical responsivity of 74 V/W and a minimum noise-equivalent power of 130 pW/Hz1/2 was presented.