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Michael L. Schneider

Researcher at National Institute of Standards and Technology

Publications -  53
Citations -  2402

Michael L. Schneider is an academic researcher from National Institute of Standards and Technology. The author has contributed to research in topics: Josephson effect & Ferromagnetic resonance. The author has an hindex of 22, co-authored 53 publications receiving 2066 citations. Previous affiliations of Michael L. Schneider include University of Wisconsin-Madison & University of Montana.

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Ferromagnetic resonance linewidth in metallic thin films: Comparison of measurement methods

TL;DR: In this paper, the linewidth of a series of Permalloy films with thicknesses of 50 and 100nm was measured using linear function of frequency, with a slope that corresponds to a nominal Landau-Lifshitz phenomenological damping parameter α value of 0.007 and zero frequency intercepts in the 160-320A∕m (2-4Oe) range.
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Ultra-low magnetic damping of a metallic ferromagnet

TL;DR: In this article, a unique feature of the band structure has been exploited to achieve similar levels of magnetic damping in a metallic alloy, which is important for a range of applications but is typically insulating.
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Ultralow power artificial synapses using nanotextured magnetic Josephson junctions.

TL;DR: A new form of artificial synapse based on dynamically reconfigurable superconducting Josephson junctions with magnetic nanoclusters in the barrier is demonstrated, which provides a significant step toward a neuromorphic platform that is faster, more energy-efficient, and thus can attain far greater complexity than has been demonstrated with other technologies.
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Reversal mechanisms in perpendicularly magnetized nanostructures

TL;DR: In this article, the authors demonstrate that magnetic reversal in perpendicularly magnetized nanostructures is highly dependent on the nature and condition of the edges, and they compare the effect of edge damage caused by ion milling to those prepared on prepatterned substrates.
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A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology

TL;DR: In this article, the authors developed a fully functional 64 Mb DDR3 ST-MRAM built on 90 nm CMOS technology, which is organized in an 8-bank configuration that can sustain 1.6 GigaTransfers/s.