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Michael Ortiz

Researcher at California Institute of Technology

Publications -  489
Citations -  34601

Michael Ortiz is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Finite element method & Dislocation. The author has an hindex of 87, co-authored 467 publications receiving 31582 citations. Previous affiliations of Michael Ortiz include Complutense University of Madrid & University of Seville.

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Quasi-continuum orbital-free density-functional theory : A route to multi-million atom non-periodic DFT calculation

TL;DR: In this article, the authors present a method that enables the study of multi-million atom clusters using orbital-free density-functional theory (OFDFT) with no spurious physics or restrictions on geometry.
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Ductile fracture by vacancy condensation in f.c.c. single crystals

TL;DR: In this article, the feasibility of vacancy condensation as the void-nucleating mechanism underlying ductile fracture by void growth and coalescence in single crystals at room temperature was explored.
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Statistical Properties of Residual Stresses and Intergranular Fracture in Ceramic Materials

TL;DR: In this article, the statistical characterization of residual stress generated in polycrystalline ceramics during cooling from the fabrication temperature is studied. Butler et al. show that the distribution of normal and shear tractions induced by thermal contraction mismatch among grains is gaussian and that these tractions are statistically independent random variables.
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Dislocation Microstructures and the Effective Behavior of Single Crystals

TL;DR: In this article, the authors consider single-crystal plasticity in the limiting case of infinite latent hardening, which signifies that the crystal must deform in single slip at all material points.
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Effect of Strain Hardening and Rate Sensitivity on the Dynamic Growth of a Void in a Plastic Material

TL;DR: In this paper, the effects of inertia, strain hardening, and rate sensitivity on the short and long-term behavior of the void, as well as on its response to ramp loading, are investigated in detail.