M
Michele Calabretta
Researcher at STMicroelectronics
Publications - 64
Citations - 266
Michele Calabretta is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Computer science & Power semiconductor device. The author has an hindex of 8, co-authored 44 publications receiving 146 citations. Previous affiliations of Michele Calabretta include University of Catania & Scuola superiore di Catania.
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Proceedings ArticleDOI
The "first and euRopEAn siC eighT Inches pilOt liNe": a project, called REACTION, that will boost key SiC Technologies upgrading (developments) in Europe, unleashing Applications in the Automotive Power Electronics Sector
Angelo Alberto Messina,Antonio Imbruglia,Michele Calabretta,Vincenzo Vinciguerra,Calin Moise,Alessandro Sitta,Marius Enachescu,Fabrizio Roccaforte +7 more
Abstract: REACTION is an EU Innovation Action Funded Project which aims to develop the first worldwide 200mm Silicon Carbide (SiC) Pilot Line for SiC based Power technology. The project, which mainly addresses the Smart Mobility societal challenge (car electrification), will allow to match the ever-increasing demand of requirements in terms of quality and cost constraint for next decade generation’s power electronics. A major strength of the project is the complete value chain implementation of the Pilot Line, which integrates and optimizes the cooperation and partnership among producers of 8" SiC substrates and equipment developers, as well as SiC process technologists, RTOs and end-users partners, in order to deliver the final applications. Hence, to achieve innovative SiC power devices with improved performances, along with cost and size reduction, are the most relevant requirements addressed in the project that are expected to lead to a new stronger European supply chain for very compact SiC converters, ideal for the addressed Automotive application.
Journal ArticleDOI
Valvetrain Friction - Modeling, Analysis and Measurement of a High Performance Engine Valvetrain System
Journal ArticleDOI
Thermal Analysis Approach for Predicting Power Device Lifetime
TL;DR: In this paper, the authors predict the device lifetime under a power cycling test by a simulation method that is based on a distributed self-heating SPICE model and a correlation between numeric extrapolation and experimental data is done by considering the Repetitive Avalanche test, which evaluates the ruggedness of a power device.
Journal ArticleDOI
Material Characterization and Warpage Modeling for Power Devices Active Metal Brazed Substrates
TL;DR: In this article, the warpage of active metal Brazed (AMB) substrates has been characterized by means of numerical approach, and the validated numerical model has been developed to optimize the substrate warpage variation during cycling improving the whole package reliability.
Journal ArticleDOI
Paving the way toward the world's first 200mm SiC pilot line
M. Musolino,Xueping Xu,Hui Wang,Varathajan Rengarajan,Ilya Zwieback,Gary E. Ruland,Danilo Crippa,Marco Mauceri,Michele Calabretta,Angelo Alberto Messina +9 more
TL;DR: In this paper, the authors describe the recent achievements in the implementation of the world's first industrial pilot line to produce power devices based on 200mm silicon carbide (SiC) wafers.