R
Riikka L. Puurunen
Researcher at Aalto University
Publications - 101
Citations - 6944
Riikka L. Puurunen is an academic researcher from Aalto University. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 30, co-authored 96 publications receiving 5990 citations. Previous affiliations of Riikka L. Puurunen include IMEC & Katholieke Universiteit Leuven.
Papers
More filters
Journal ArticleDOI
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
TL;DR: In this paper, the surface chemistry of the trimethylaluminum/water ALD process is reviewed, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials.
Journal ArticleDOI
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
TL;DR: Puurunen et al. as discussed by the authors summarized the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD.
Journal ArticleDOI
Island growth as a growth mode in atomic layer deposition: A phenomenological model
TL;DR: In this paper, a division of ALD processes to four classes is proposed, on the basis of how the growth-per-cycle varies with the number of reaction cycles: linear growth, substrateenhanced growth, and substrate-inhibited growth of type 1 and type 2.
Journal ArticleDOI
Crystallinity of Inorganic Films Grown by Atomic Layer Deposition: Overview and General Trends
TL;DR: Puurunen et al. as discussed by the authors summarized the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD.
Journal ArticleDOI
Conformality in atomic layer deposition : current status overview of analysis and modelling
TL;DR: In this paper, the authors present a review of the current status of knowledge about the conformality of ALD processes, including an overview of relevant gas transport regimes, definitions of exposure and sticking probability, and a distinction between different ALD growth types observed in high aspect ratio structures.