Ming-Long Fan

TL;DR: In this article, the impacts of a single acceptor-type and donor-type interface trap induced random telegraph noise (RTN) on tunnel FET (TFET) devices and its interaction with work function variation (WFV) using atomistic 3-D TCAD simulations were analyzed.

TL;DR: In this paper, the impact of work function variation on FinFET and ultrathin body (UTB) silicon-on-insulator (SOI) devices was investigated and compared.

TL;DR: Compared with the 6T cell, this paper indicates that 4TSRAM cells exhibit a better nominal READ static noise margin (RSNM) because of the reduced READ disturb, and for WRITE operation, 4T SRAM cells exhibits a superior WSNM, whereas the design margin between WRITE time and WRITE disturb needs to be carefully examined to ensure an adequate margin considering device variability.

TL;DR: In this paper, the impact of single-charged-trap-induced random telegraph noise (RTN) on FinFET devices in tied-and independent-gate modes, 6T static random access memory (SRAM) cell stability, and several basic logic circuits is evaluated through 3-D atomistic TCAD simulation.

TL;DR: In this article, the impacts of intrinsic process variations and negative bias temperature instability (NBTI)/positive BTI (PBTI)-induced time-dependent variations on the stability/variability of 6T FinFET static random access memory (SRAM) cells with various surface orientations and gate dielectrics were analyzed.