M
Mingda Zhu
Researcher at Cornell University
Publications - 43
Citations - 1669
Mingda Zhu is an academic researcher from Cornell University. The author has contributed to research in topics: Breakdown voltage & Gallium nitride. The author has an hindex of 17, co-authored 42 publications receiving 1400 citations. Previous affiliations of Mingda Zhu include University of Notre Dame.
Papers
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Journal ArticleDOI
Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators.
Berardi Sensale-Rodriguez,Rusen Yan,Rusen Yan,Subrina Rafique,Mingda Zhu,Wei Li,Wei Li,Xuelei Liang,David J. Gundlach,Vladimir Protasenko,Michelle M. Kelly,Debdeep Jena,Lei Liu,Huili Grace Xing +13 more
TL;DR: This graphene-based electro-absorption modulator performance, among the best reported to date, indicates the enormous potential of graphene for terahertz reconfigurable optoelectronic devices.
Journal ArticleDOI
1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon
Mingda Zhu,Bo Song,Meng Qi,Zongyang Hu,Kazuki Nomoto,Xiaodong Yan,Yu Cao,Wayne Johnson,Erhard Kohn,Debdeep Jena,Huili Grace Xing +10 more
TL;DR: In this paper, the authors presented AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates, achieving a low specific ON-resistance (5.12
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Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
Zongyang Hu,Zongyang Hu,Kazuki Nomoto,Kazuki Nomoto,Bo Song,Bo Song,Mingda Zhu,Mingda Zhu,Meng Qi,Ming Pan,Xiang Gao,Vladimir Protasenko,Vladimir Protasenko,Debdeep Jena,Debdeep Jena,Huili Grace Xing,Huili Grace Xing +16 more
TL;DR: In this paper, the authors show that vertical GaN p-n diodes with a mesa diameter of 107μm can achieve an avalanche breakdown voltage (BV) of > 1.4 kV under reverse bias, an ideality factor plateau of ∼2.0 in a forward bias window followed by a near unity ideality Factor of 1.1, which is consistently achieved over a temperature range of 300-400
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1.7-kV and 0.55- $\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability
Kazuki Nomoto,Bo Song,Zongyang Hu,Mingda Zhu,Meng Qi,Naoki Kaneda,Tomoyoshi Mishima,Tohru Nakamura,Debdeep Jena,Huili Grace Xing +9 more
TL;DR: In this article, the authors reported vertical GaN-on-GaN p-n diodes with a breakdown voltage (BV) of 1.7 kV and a low differential specific ON-resistance (R_{\mathrm{\scriptscriptstyle ON}}$ of 0.55 with current spreading considered.
Journal ArticleDOI
Terahertz imaging employing graphene modulator arrays
Berardi Sensale-Rodriguez,Subrina Rafique,Rusen Yan,Mingda Zhu,Vladimir Protasenko,Debdeep Jena,Lei Liu,Huili Grace Xing +7 more
TL;DR: Although the prototype presented here only contains 4x4 pixels, it reveals the possibility of developing reliable low-cost video-rate THz imaging systems employing single detector.