M
Minhua Lu
Researcher at IBM
Publications - 11
Citations - 602
Minhua Lu is an academic researcher from IBM. The author has contributed to research in topics: Layer (electronics) & Ion beam. The author has an hindex of 7, co-authored 11 publications receiving 570 citations.
Papers
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Journal ArticleDOI
Atomic-beam alignment of inorganic materials for liquid-crystal displays
P. Chaudhari,James A. Lacey,James P. Doyle,Eileen A. Galligan,Shui Chi Alan Lien,Alesandro Callegari,Gareth G. Hougham,Norton D. Lang,Paul S. Andry,Richard A. John,Kei Hsuing Yang,Minhua Lu,Chen Cai,James L. Speidell,Sampath Purushothaman,John J. Ritsko,Mahesh G. Samant,Joachim Stöhr,Yoshiki Nakagawa,Yoshimine Katoh,Yukito Saitoh,Kazumi Sakai,Hiroyuki Satoh,Shuichi Odahara,Hiroki Nakano,Johji Nakagaki,Yasuhiko Shiota +26 more
TL;DR: A non-contact alignment process, which uses low-energy ion beams impinging at a glancing angle on amorphous inorganic films, such as diamond-like carbon, is reported, and it is found that displays of higher quality and reliability could be made at a lower cost than the rubbing technique.
Proceedings ArticleDOI
A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding
Fei Liu,R.R. Yu,Albert M. Young,J.P. Doyle,Xinhui Wang,Leathen Shi,Kuan-Neng Chen,Xiaolin Li,D.A. Dipaola,David F. Brown,C.T. Ryan,J.A. Hagan,Kwong Hon Wong,Minhua Lu,Xiaoxiong Gu,N. Klymko,Eric D. Perfecto,Arthur G. Merryman,Kimberley A. Kelly,Sampath Purushothaman,Steven J. Koester,Robert L. Wisnieff,Wilfried Haensch +22 more
TL;DR: In this article, a 300mm wafer-level three-dimensional integration (3DI) process using tungsten (W) through-silicon vias and hybrid Cu/adhesive wafer bonding is demonstrated.
Patent
Ion gun deposition and alignment for liquid-crystal applications
Alessandro C. Callegari,Praveen Chaudhari,James P. Doyle,Eileen A. Galligan,Yoshimine Kato,James A. Lacey,Shui-Chih Alan Lien,Minhua Lu,Hiroki Nakano,Shuichi Odahara +9 more
TL;DR: In this paper, an ion beam is used to bomb a substrate with an ionbeam at a designated incident angle to simultaneously deposit the film onto the substrate and arrange an atomic structure of the film in at least one predetermined aligned direction.
Patent
Stability of ion beam generated alignment layers by surface modification
Alessandro C. Callegari,Praveen Chaudhari,Fuad E. Doany,James P. Doyle,Eileen A. Galligan,James H. Glownia,Gareth G. Hougham,James A. Lacey,Shui-Chih Lien,Minhua Lu,Alan E. Rosenbluth,Kei-Hsiung Yang +11 more
TL;DR: In this article, the surface is bombarded with ions and quenched with a reactive component to saturate dangling bonds on the surface, and a reactive gas is introduced to the ion beam to saturation the dangling bonds.
Patent
Method for forming alignment layer by ion beam surface modification
Alessandro C. Callegari,Praveen Chaudhari,Fuad E. Doany,James P. Doyle,Eileen A. Galligan,James H. Glownia,Gareth G. Hougham,James A. Lacey,Shui-Chih Lien,Minhua Lu,Alan E. Rosenbluth,Kei-Hsiung Yang +11 more
TL;DR: In this article, the surface is bombarded with ions and quenched with a reactive component to saturate dangling bonds on the surface, and a reactive gas is introduced to the ion beam to saturation the dangling bonds.