X
Xinhui Wang
Researcher at IBM
Publications - 34
Citations - 1142
Xinhui Wang is an academic researcher from IBM. The author has contributed to research in topics: Layer (electronics) & Silicon on insulator. The author has an hindex of 14, co-authored 33 publications receiving 1112 citations. Previous affiliations of Xinhui Wang include GlobalFoundries.
Papers
More filters
Journal ArticleDOI
Silicon CMOS devices beyond scaling
Wilfried Haensch,E. J. Nowak,Robert H. Dennard,Paul M. Solomon,A. Bryant,Omer H. Dokumaci,Arvind Kumar,Xinhui Wang,Jeffrey B. Johnson,Massimo V. Fischetti +9 more
TL;DR: This paper discusses device and material options to improve device performance when conventional scaling is power-constrained, separated into three categories: improved short-channel behavior, improved current drive, and improved switching behavior.
Proceedings ArticleDOI
A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding
Fei Liu,R.R. Yu,Albert M. Young,J.P. Doyle,Xinhui Wang,Leathen Shi,Kuan-Neng Chen,Xiaolin Li,D.A. Dipaola,David F. Brown,C.T. Ryan,J.A. Hagan,Kwong Hon Wong,Minhua Lu,Xiaoxiong Gu,N. Klymko,Eric D. Perfecto,Arthur G. Merryman,Kimberley A. Kelly,Sampath Purushothaman,Steven J. Koester,Robert L. Wisnieff,Wilfried Haensch +22 more
TL;DR: In this article, a 300mm wafer-level three-dimensional integration (3DI) process using tungsten (W) through-silicon vias and hybrid Cu/adhesive wafer bonding is demonstrated.
Patent
Wet bottling process for small diameter deep trench capacitors
TL;DR: In this paper, the SOI layer is placed directly on top of a buried oxide layer, and a bottle-shaped trench is formed by etching the base substrate exposed in the lower portion of the deep trench selective to the dielectric material and the buried oxide layers.
Patent
finFETs and methods of making same
Kevin K. Chan,Thomas S. Kanarsky,Jinghong Li,C. Ouyang,Dae-Gyu Park,Zhibin Ren,Xinhui Wang,Haizhou Yin +7 more
TL;DR: In this paper, a method of fabricating and a structure of a merged multi-fin finFET is proposed, which includes forming single-crystal silicon fin from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxially silicon from ends of the fin such that vertical epitaxisial silicon growth predominates.
Proceedings ArticleDOI
Investigation of FinFET Devices for 32nm Technologies and Beyond
H. Shang,Leland Chang,Xinhui Wang,Michael J. Rooks,Y. Zhang,B. To,Katherina Babich,G. Totir,Yanning Sun,Edward W. Kiewra,Meikei Ieong,Wilfried Haensch +11 more
TL;DR: A new FinFET design without S/D contact pads is proposed and a selective epitaxial process to merge individual fins is developed to address some key challenges of FINFETs for 32nm node technologies and beyond.