M
Mitsuhiro Tanaka
Researcher at Shinshu University
Publications - 218
Citations - 2624
Mitsuhiro Tanaka is an academic researcher from Shinshu University. The author has contributed to research in topics: Nitride & Layer (electronics). The author has an hindex of 26, co-authored 216 publications receiving 2554 citations. Previous affiliations of Mitsuhiro Tanaka include French Alternative Energies and Atomic Energy Commission.
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Patent
Semiconductor light-emitting device
TL;DR: In this paper, the gallium nitride series semiconductor was used to obtain a light emitting diode (LED) with a high luminous efficiency even by using a silicon substrate, where the semiconductor light emitting device has such a structure that the surface of an active layer 6 composed of a gallium-nitride-series semiconductor has the uneven structure of a pyramid shape.
Patent
Semiconductor light-emitting element
TL;DR: In this article, a light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of I-AlGaInN isolated in the base layer.
Journal ArticleDOI
Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN
TL;DR: In this paper, a procedure to grow GaN quantum dots (QDs) on AlN by using the Ga surfactant effect in plasma-assisted molecular beam epitaxy was proposed.
Journal ArticleDOI
Si-doped GaN /AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths
Fabien Guillot,Edith Bellet-Amalric,Eva Monroy,Maria Tchernycheva,Laurent Nevou,L. Doyennette,F. H. Julien,Le Si Dang,T. Remmele,Martin Albrecht,Tomohiko Shibata,Mitsuhiro Tanaka +11 more
TL;DR: In this article, the authors report on the controlled growth by molecular beam epitaxy of 20-period Si-doped GaN∕AlN quantum dot (QD) superlattices, in order to tailor their intraband absorption within the 1.3-1.55μm telecommunication spectral range.
Journal ArticleDOI
High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy
Makoto Miyoshi,Hiroyasu Ishikawa,T. Egawa,Keiichiro Asai,M. Mouri,Tomohiko Shibata,Mitsuhiro Tanaka,Osamu Oda +7 more
TL;DR: In this article, the electron mobility of the two-dimensional electron gas (2DEG) confined at the GaN channel was investigated on 100mm-diam epitaxial AlN/sapphire templates and sapphire substrates.