M
Mohamed Boufnichel
Researcher at STMicroelectronics
Publications - 33
Citations - 821
Mohamed Boufnichel is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Etching (microfabrication) & Plasma etching. The author has an hindex of 13, co-authored 31 publications receiving 697 citations.
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Journal ArticleDOI
Plasma cryogenic etching of silicon: from the early days to today's advanced technologies
TL;DR: In this article, the evolution of silicon cryoetching is reported from its very first introduction by a Japanese team to today's advanced technologies, and the main defects encountered in the process are presented and discussed.
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Passivation mechanisms in cryogenic SF6/O2 etching process
Remi Dussart,Mohamed Boufnichel,G. Marcos,Philippe Lefaucheux,A Basillais,R Benoit,Thomas Tillocher,Xavier Mellhaoui,H Estrade-Szwarckopf,Pierre Ranson +9 more
TL;DR: In this paper, the passivating layer is removed during the increase of the wafer chuck temperature leading to a very clean surface of the sidewalls after processing, and a two-step process is defined to rebuild the passivation layer after its destruction and continue the trench etching.
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SiOxFy passivation layer in silicon cryoetching
Xavier Mellhaoui,Remi Dussart,Thomas Tillocher,Philippe Lefaucheux,Pierre Ranson,Mohamed Boufnichel,Lawrence J. Overzet +6 more
TL;DR: In this paper, the SiOxFy passivation layer created on structure sidewalls during silicon cryoetching is investigated and two physical mechanisms are proposed to explain the SiO2 passivati...
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In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process
Jeremy Pereira,Laurianne Pichon,Remi Dussart,Christophe Cardinaud,Corinne Duluard,El-Houcine Oubensaid,Philippe Lefaucheux,Mohamed Boufnichel,Pierre Ranson +8 more
TL;DR: In this paper, the desorption of a SiOxFy layer obtained in an overpassivating SF6/O2 regime was investigated during the wafer warm-up from the cryogenic temperature to room temperature.
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Deep GaN etching by inductively coupled plasma and induced surface defects
Julien Ladroue,Aline Meritan,Mohamed Boufnichel,Philippe Lefaucheux,Pierre Ranson,Remi Dussart +5 more
TL;DR: In this article, an original method to estimate GaN dislocation density and to localize nanopipes in the material is presented, and columnar defects could also appear with impurities in the etching reactor.