Moritaka Nakamura

TL;DR: In this article, the etching yields of SiO2 have been determined for F+, CFx+ (x=1,2,3) ion irradiation with energy ranging from 250 to 2000 eV using a mass-analyzed ion-beam apparatus that can irradiate a single species ion to sample surfaces under an ultrahigh vacuum condition.

TL;DR: In this paper, the authors clarified the origins of high selectivity in SiO2-to-SiN etching in fluorocarbon gas plasma, mass-analyzed CFx+ (x=1,2,3) ions with a definite kinetic energy of 250-2000eV were irradiated on SiN and SiO 2 surfaces.

TL;DR: In this paper, surface modifications were observed by the formation of CN and NH bonds after exposure to plasmas generated from N2 and H2, and the number of carbon dangling bonds were greater in processes where H2 was present.

TL;DR: In this article, the etching of SiO2 film and the growth of amorphous fluorinated carbon (a-C:F) film by mass-analyzed fluorocarbon ion irradiation were studied in an ultrahigh vacuum with a pressure of 10−7 Pa.