M
Morten Willatzen
Researcher at Chinese Academy of Sciences
Publications - 282
Citations - 5081
Morten Willatzen is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Quantum dot & Boundary value problem. The author has an hindex of 32, co-authored 268 publications receiving 4349 citations. Previous affiliations of Morten Willatzen include Center for Excellence in Education & Technical University of Denmark.
Papers
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Electronic properties of semiconductor nanowires.
TL;DR: This paper provides a review of the state-of-the-art electronic-structure calculations of semiconductor nanowires using empirical k.p, empirical tight-binding, semi-empirical pseudopotential, and with ab initio methods.
Book
The k p Method: Electronic Properties of Semiconductors
TL;DR: In this article, the authors propose a one-band model for homogeneous crystals, based on the one-dimensional model of the Valence Band and the Kane Model. But the model does not consider the effect of magnetic effects.
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Nonlinear gain suppression in semiconductor lasers due to carrier heating
TL;DR: In this article, a simple model for carrier heating in semiconductor lasers from which the temperature dynamics of the electron and hole distributions can be calculated is presented and analytical expressions for two new contributions to the nonlinear gain coefficient, in are derived, which reflect carrier heating due to stimulated emission and free carrier absorption.
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A general dynamic simulation model for evaporators and condensers in refrigeration. Part I: moving-boundary formulation of two-phase flows with heat exchange
TL;DR: In this paper, a mathematical model describing the transient phenomena of two-phase flow heat exchangers is presented based on the one-dimensional partial-differential equations representing mass and energy conservation (leaving out momentum equations assuming pressure drops to be negligible).
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Bandstructures of conical quantum dots with wetting layers
Roderick Melnik,Morten Willatzen +1 more
TL;DR: In this paper, the influence of wetting layer states on quantum-dot states and vice versa is analyzed numerically for electrons in the conduction band in the general case with arbitrary kinetic energy in the plane of the quantum-well wetting layers.