M
Munawar Agus Riyadi
Researcher at Diponegoro University
Publications - 128
Citations - 433
Munawar Agus Riyadi is an academic researcher from Diponegoro University. The author has contributed to research in topics: MOSFET & Threshold voltage. The author has an hindex of 9, co-authored 114 publications receiving 342 citations. Previous affiliations of Munawar Agus Riyadi include Universiti Teknologi Malaysia.
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How Can We Identify Hijacked Journals
TL;DR: In this article, the authors introduce an approach to identify this type of journals that will be applicable by researchers in various academic disciplines, which will be used to enhance the academic standards of Universities, especially those that are indexed in websites such as Thomson Reuters.
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WhatsApp, Viber and Telegram which is Best for Instant Messaging?
TL;DR: The popularity of Telegram has reached at the top of Google play store and become the most downloaded messaging app in the world today, but at the moment WhatsApp is still the winner!
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The channel mobility degradation in a nanoscale metal–oxide–semiconductor field effect transistor due to injection from the ballistic contacts
TL;DR: In this paper, it was shown that the ballistic mobility degradation originates from nonstationary transport in response to the ohmic electric field, and the distinction was made between the ballistic mean free path and that present in a long channel.
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The future of non-planar nanoelectronics MOSFET devices: a review
TL;DR: In this article, the authors focused on the evaluation of present development of nanoelectronic devices and the projection of future devices, ultimately for non-planar geometry, and the role of double gate MOSFET and nonplanar structure devices, including vertical FETs.
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Concentration dependence of drift and magnetoresistance ballistic mobility in a scaled-down metal-oxide semiconductor field-effect transistor
Vijay K. Arora,Vijay K. Arora,Mastura Shafinaz Zainal Abidin,Saurabh Tembhurne,Saurabh Tembhurne,Munawar Agus Riyadi,Munawar Agus Riyadi +6 more
TL;DR: In this paper, the degradation of ballistic mobility in a metal-oxide semiconductor field effect transistor is attributed to the nonstationary ballistic injection from the contacts as the length of a channel shrinks to the length smaller than the scattering-limited mean free path.