N
N. Klymko
Researcher at IBM
Publications - 1
Citations - 206
N. Klymko is an academic researcher from IBM. The author has contributed to research in topics: Electron mobility & Chemical-mechanical planarization. The author has an hindex of 1, co-authored 1 publications receiving 202 citations.
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Proceedings ArticleDOI
Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs
Kern Rim,K.K. Chan,Leathen Shi,Diane C. Boyd,John A. Ott,N. Klymko,F. Cardone,Leo Tai,Steven J. Koester,Michael A. Cobb,Donald F. Canaperi,B. To,E. Duch,I. Babich,R. Carruthers,P. Saunders,G. Walker,Y. Zhang,Michelle L. Steen,Meikei Ieong +19 more
TL;DR: In this article, a tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure and electron and hole mobility enhancements were demonstrated.