L
Leo Tai
Researcher at IBM
Publications - 20
Citations - 357
Leo Tai is an academic researcher from IBM. The author has contributed to research in topics: Copper interconnect & Chemical-mechanical planarization. The author has an hindex of 8, co-authored 20 publications receiving 332 citations.
Papers
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Proceedings ArticleDOI
Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs
Kern Rim,K.K. Chan,Leathen Shi,Diane C. Boyd,John A. Ott,N. Klymko,F. Cardone,Leo Tai,Steven J. Koester,Michael A. Cobb,Donald F. Canaperi,B. To,E. Duch,I. Babich,R. Carruthers,P. Saunders,G. Walker,Y. Zhang,Michelle L. Steen,Meikei Ieong +19 more
TL;DR: In this article, a tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure and electron and hole mobility enhancements were demonstrated.
Proceedings ArticleDOI
CVD Co and its application to Cu damascene interconnections
Takeshi Nogami,J. Maniscalco,Anita Madan,Philip L. Flaitz,Patrick W. DeHaven,Christopher Parks,Leo Tai,B. St. Lawrence,R. J. Davis,R. Murphy,Timothy M. Shaw,Stephan A. Cohen,C.-K. Hu,Cyril Cabral,Sunny Chiang,James J. Kelly,M. Zaitz,J. Schmatz,Samuel S. Choi,Kazumichi Tsumura,Christopher J. Penny,H. Chen,Donald F. Canaperi,Tuan A. Vo,Fuminori Ito,Oscar van der Straten,A. Simon,S-H. Rhee,B-Y. Kim,Tibor Bolom,Vivian W. Ryan,Paul F. Ma,J. Ren,Joseph F. Aubuchon,J. Fine,P. Kozlowski,Terry A. Spooner,Daniel C. Edelstein +37 more
TL;DR: In this article, a variety of micro-analytical techniques for CVD Co with nano-scale copper interconnects were studied for the purpose of analyzing the properties of in-film oxygen and carbon.
Proceedings ArticleDOI
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
Takeshi Nogami,T. Bolom,A. Simon,B-Y. Kim,C.-K. Hu,Kazumichi Tsumura,Anita Madan,Frieder H. Baumann,Yun-Yu Wang,Philip L. Flaitz,Christopher Parks,Patrick W. DeHaven,R. J. Davis,M. Zaitz,B. St. Lawrence,R. Murphy,Leo Tai,Steven E. Molis,S-H. Rhee,Takamasa Usui,Cyril Cabral,J. Maniscalco,Clevenger Leigh Anne H,Baozhen Li,Cathryn Christiansen,F. Chen,T. Lee,J. Schmatz,Hosadurga Shobha,F. Ito,T. Ryan,Son Nguyen,Donald F. Canaperi,John C. Arnold,Samuel S. Choi,Stephan A. Cohen,Eric G. Liniger,H. Chen,S. H. Chen,Tuan A. Vo,James J. Kelly,Oscar van der Straten,Christopher J. Penny,Griselda Bonilla,P. Kozlowski,Terry A. Spooner,Daniel C. Edelstein +46 more
TL;DR: In this article, a 32 nm BEOL with PVD CuMn seedlayer and conventional PVD-TaN/Ta liner was fully characterized by fundamental, integrated, and reliability methods.
Proceedings ArticleDOI
A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs
Tenko Yamashita,Sanjay Mehta,Veeraraghavan S. Basker,Richard G. Southwick,Amit Kumar,R. Kambhampati,Rajesh Sathiyanarayanan,J. Johnson,T. Hook,Stephan A. Cohen,James Chingwei Li,Anita Madan,Z. Zhu,Leo Tai,Yiping Yao,Pavan S. Chinthamanipeta,Marinus Hopstaken,Zuoguang Liu,Darsen D. Lu,F. Chen,Shahrukh A. Khan,Donald F. Canaperi,Balasubramanian S. Pranatharthi Haran,James H. Stathis,P. Oldiges,C-H. Lin,Shreesh Narasimha,A. Bryant,William K. Henson,S. Kanakasabapathy,Kota V. R. M. Murali,T. Gow,D. McHerron,Huiming Bu,Mukesh Khare +34 more
TL;DR: In this paper, a low temperature ALD-based SiBCN material has been identified, with an optimized spacer RIE process developed to preserve the low-k value and provide compatibility with the down-stream processes.
Proceedings ArticleDOI
Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals
Takeshi Nogami,Christopher J. Penny,Anita Madan,Christopher Parks,James Chingwei Li,Philip L. Flaitz,Akira Uedono,Sunny Chiang,Ming He,A. Simon,Tibor Bolom,T. Ryan,F. Ito,Cathryn Christiansen,Leo Tai,C.-K. Hu,Hoon Kim,X. Zhang,Kunaljeet Tanwar,Samuel S. Choi,Frieder H. Baumann,R. J. Davis,James J. Kelly,R. Murphy,Steven E. Molis,J. Rowland,Patrick W. DeHaven,Donald F. Canaperi,Terry A. Spooner,Daniel C. Edelstein +29 more
TL;DR: In this paper, a metallic state Mn-rich Cu layer under the MnOx layer at the Cu/SiCNH cap interface was found, and correlated this metallic layer with additional EM enhancement, suggesting O-free Co liner films are strategic for Cu-alloy seed extendibility.