N
Naoe Hosoda
Researcher at National Institute for Materials Science
Publications - 50
Citations - 1433
Naoe Hosoda is an academic researcher from National Institute for Materials Science. The author has contributed to research in topics: Surface activated bonding & Direct bonding. The author has an hindex of 18, co-authored 49 publications receiving 1304 citations. Previous affiliations of Naoe Hosoda include Max Planck Society & University of Tokyo.
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Influence of surface roughness on gecko adhesion.
TL;DR: Experimental data for the force necessary to pull off single spatulae from hard rough substrates are presented and also observations on living geckos clinging to various surfaces are detail observations on the nano- and macroscales.
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Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation
TL;DR: In this article, the authors measured surface roughness enhancement caused by Ar beam etching and investigated the relationship between roughness and bonding properties such as strength and interfacial voids.
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Room-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation
TL;DR: In this article, the surfaces of the specimens are etched by fast argon atom beam and bonded to each other in vacuum, achieving bonding strength equivalent to that of the bulk material without any heat treatment.
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Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method
TL;DR: The surface activated bonding method has been applied to bond the III-V compound semiconductor wafers and Si wafer directly at room temperature in ultra high vacuum as discussed by the authors, where the surfaces to be bonded are sputter-cleaned and activated by Ar fast atom beam irradiation and brought into contact under slight pressure.
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Transmission Electron Microscope Observations of Si/Si Interface Bonded at Room Temperature by Ar Beam Surface Activation
TL;DR: In this article, an amorphous-like intermediate layer is observed in high-resolution images of the interface of silicon wafers using a transmission electron microscope (TEM), and it is observed only in specimens bonded at room temperature, because it relaxes even by low-temperature annealing at 400°C.