The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.

Electronics based on two-dimensional materials

In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.

Metal–Oxide RRAM

Quantification of biological or biochemical processes are of utmost importance for medical, biological and biotechnological applications. However, converting the biological information to an easily processed electronic signal is challenging due to the complexity of connecting an electronic device directly to a biological environment. Electrochemical biosensors provide an attractive means to analyze the content of a biological sample due to the direct conversion of a biological event to an electronic signal. Over the past decades several sensing concepts and related devices have been developed. In this review, the most common traditional techniques, such as cyclic voltammetry, chronoamperometry, chronopotentiometry, impedance spectroscopy, and various field-effect transistor based methods are presented along with selected promising novel approaches, such as nanowire or magnetic nanoparticle-based biosensing. Additional measurement techniques, which have been shown useful in combination with electrochemical detection, are also summarized, such as the electrochemical versions of surface plasmon resonance, optical waveguide lightmode spectroscopy, ellipsometry, quartz crystal microbalance, and scanning probe microscopy. The signal transduction and the general performance of electrochemical sensors are often determined by the surface architectures that connect the sensing element to the biological sample at the nanometer scale. The most common surface modification techniques, the various electrochemical transduction mechanisms, and the choice of the recognition receptor molecules all influence the ultimate sensitivity of the sensor. New nanotechnology-based approaches, such as the use of engineered ion-channels in lipid bilayers, the encapsulation of enzymes into vesicles, polymersomes, or polyelectrolyte capsules provide additional possibilities for signal amplification. In particular, this review highlights the importance of the precise control over the delicate interplay between surface nano-architectures, surface functionalization and the chosen sensor transducer principle, as well as the usefulness of complementary characterization tools to interpret and to optimize the sensor response.

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Electrochemical Biosensors - Sensor Principles and Architectures

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Laboratoire de Génie Enzymatique et Biomoléculaire, Institut de Chimie et Biochimie Moléculaires et Supramoléculaires, 43 Boulevard du 11 Novembre 1918, Villeurbanne F-69622, France, UMR5246, Centre National de La Recherche Scientifque, Villeurbanne F-69622, France, Université de Lyon, Lyon F-69622, France, Université Lyon 1, Lyon F-69622, France, Institut National des Sciences Appliquées de Lyon, EÄ cole d’Ingénieurs, Villeurbanne F-69621, France, and EÄ cole Supérieure Chimie Physique EÄ lectronique de Lyon, Villeurbanne F-69616, France

DNA biosensors and microarrays.

Heterogeneously Integrated Aluminum Nitride MEMS Resonators and Filters

Accuracy Assessment of Charge-Based Capacitance Measurement for Nanoscale MOSFET Devices

This paper reports various etch-hole schemes based on the location and quantities of etch holes to improve robustness of the Thin Film Encapsulation (TFE). In order to achieve robust TFE, different etch hole mapping is performed on the cap layer and robustness of TFE was evaluated by measuring the height of the TFE using optical profiler measurement after sealing. For demonstrating the TFE, amorphous Si and AlN (or SiO2) were used as a sacrificial layer and the cap layer, respectively. Etching of a-Si sacrificial layer was performed with help of XeF 2 . Experimental result shows that the quantity of etch holes and their location on the cap layer influence the downward deformation of the TFE after sealing process. A uniformly distributed etch holes scheme is effective in controlling the stress of encapsulation which results in low downward deformation.

Etch-hole design in encapsulation for better robustness

In this paper, the pulse-echo voltage response of CMOS integrated Al0.85Sc0.15N piezoelectric transducer are measured and compared to that with AlN transducer. The AlScN transducers are fabricated on a 180nm CMOS wafer, with six levels of metallization. A 60ns wide RF pulse packet drives the transducers with carrier frequency ranging from 700 MHz to 3 GHz. The voltage insertion loss of the reflected signal compared to the transmit signal is measured for AlScN and AlN transducers, above different combinations of metal stacks. The AlScN transducers exhibit a lower insertion loss and broader bandwidth compared to the AlN transducers. A UHF-120 PolyTec vibrometer is used to measure the piezoelectric displacement of the transducer versus frequency. The piezoelectric displacement of the AlScN transducer is ~10 times greater than the AlN transducers. The experimental measurements indicate that monolithically integrated AlScN on CMOS might provide higher performance SNR compared to AlN films in BAW applications.

Characterization of Metal Effect on Solidly Mounted AlScN on CMOS

We present a highly compact integrated silicon nitride optical phased array (OPA) for laser beam steering fabricated in a CMOS-compatible silicon photonic platform. The basic components to form the OPA are optimized separately, including low-loss waveguide, multi-mode interference splitter, thermo-optic phase shifter, and grating emitter array. The demonstrated OPA with 16 channels exhibits continuous thermo-optic steering in free space of $\sim 12 ^{\circ}$ with beam divergence of $\sim 1.1 ^{\circ}$ and speed of $\sim 8$ kHz. The approaches for further performance improvement are discussed.

Navab Singh

Papers

Heterogeneously Integrated Aluminum Nitride MEMS Resonators and Filters

Accuracy Assessment of Charge-Based Capacitance Measurement for Nanoscale MOSFET Devices

Etch-hole design in encapsulation for better robustness

Characterization of Metal Effect on Solidly Mounted AlScN on CMOS

CMOS-compatible Integrated Silicon Nitride Optical Phase Array for Electrically Tunable Off-chip Laser Beam Steering