N
Navab Singh
Researcher at Agency for Science, Technology and Research
Publications - 355
Citations - 8869
Navab Singh is an academic researcher from Agency for Science, Technology and Research. The author has contributed to research in topics: Nanowire & CMOS. The author has an hindex of 44, co-authored 346 publications receiving 7946 citations. Previous affiliations of Navab Singh include Singapore Science Park & National University of Singapore.
Papers
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Journal ArticleDOI
FePt Patterned Media Fabricated by Deep UV Lithography Followed by Sputtering or PLD
L.J. Qiu,Jeak Ling Ding,A. O. Adeyeye,J. H. Yin,Jingsheng Chen,Sarjoosing Goolaup,Navab Singh +6 more
TL;DR: In this article, continuous and patterned FePt films (40 nm) were fabricated on silicon (100) substrates using deep ultraviolet lithography with the wavelength of 248 nm followed by sputter deposition or pulsed laser deposition at room temperature, liftoff, and postannealing in vacuum.
Journal ArticleDOI
Magnetoresistance behavior of bi-component antidot nanostructures
TL;DR: In this article, the magnetoresistance behavior of bi-component antidot nanostructures consisting of the Ni80Fe20 antidot with holes filled with Fe dots was investigated.
Patent
Resistive memory arrangement and a method of forming the same
TL;DR: In this article, a resistive memory arrangement including a nanowire, and a resistor memory cell including a resistor changing material, was provided, where at least a section of the resistive layer is arranged covering at least part of a surface of the nanowires and a conductive layer was arranged on at least some part of the resistor layer.
Journal ArticleDOI
Quantization of spin waves in oval-shaped nanorings
C.G. Tan,Hock Siah Lim,Zhikui Wang,Ser Choon Ng,Meng Hau Kuok,Sarjoosing Goolaup,A. O. Adeyeye,Navab Singh +7 more
TL;DR: In this paper, the spin wave properties of a single isolated permalloy nanoring were analyzed in terms of quantized Damon-Eshbach modes due to lateral confinement in the finite size rings.
Journal ArticleDOI
Charge-Based Capacitance Measurement Technique for Nanoscale Devices: Accuracy Assessment Based on TCAD Simulations
TL;DR: In this article, the authors carried out extensive mixed device and circuit-mode simulations to calibrate the charge-based capacitance measurement technique specifically for subfemto-farad nanowire-based device capacitance.