The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.

Electronics based on two-dimensional materials

In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.

Metal–Oxide RRAM

Quantification of biological or biochemical processes are of utmost importance for medical, biological and biotechnological applications. However, converting the biological information to an easily processed electronic signal is challenging due to the complexity of connecting an electronic device directly to a biological environment. Electrochemical biosensors provide an attractive means to analyze the content of a biological sample due to the direct conversion of a biological event to an electronic signal. Over the past decades several sensing concepts and related devices have been developed. In this review, the most common traditional techniques, such as cyclic voltammetry, chronoamperometry, chronopotentiometry, impedance spectroscopy, and various field-effect transistor based methods are presented along with selected promising novel approaches, such as nanowire or magnetic nanoparticle-based biosensing. Additional measurement techniques, which have been shown useful in combination with electrochemical detection, are also summarized, such as the electrochemical versions of surface plasmon resonance, optical waveguide lightmode spectroscopy, ellipsometry, quartz crystal microbalance, and scanning probe microscopy. The signal transduction and the general performance of electrochemical sensors are often determined by the surface architectures that connect the sensing element to the biological sample at the nanometer scale. The most common surface modification techniques, the various electrochemical transduction mechanisms, and the choice of the recognition receptor molecules all influence the ultimate sensitivity of the sensor. New nanotechnology-based approaches, such as the use of engineered ion-channels in lipid bilayers, the encapsulation of enzymes into vesicles, polymersomes, or polyelectrolyte capsules provide additional possibilities for signal amplification. In particular, this review highlights the importance of the precise control over the delicate interplay between surface nano-architectures, surface functionalization and the chosen sensor transducer principle, as well as the usefulness of complementary characterization tools to interpret and to optimize the sensor response.

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Electrochemical Biosensors - Sensor Principles and Architectures

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Laboratoire de Génie Enzymatique et Biomoléculaire, Institut de Chimie et Biochimie Moléculaires et Supramoléculaires, 43 Boulevard du 11 Novembre 1918, Villeurbanne F-69622, France, UMR5246, Centre National de La Recherche Scientifque, Villeurbanne F-69622, France, Université de Lyon, Lyon F-69622, France, Université Lyon 1, Lyon F-69622, France, Institut National des Sciences Appliquées de Lyon, EÄ cole d’Ingénieurs, Villeurbanne F-69621, France, and EÄ cole Supérieure Chimie Physique EÄ lectronique de Lyon, Villeurbanne F-69616, France

DNA biosensors and microarrays.

The development of a robust system-in-package (SiP) technology for MEMS sensors is reported in this paper. The MEMS sensor and the application-specific integrated circuit (ASIC) chip are stacked together on a quad-flat no-leads (QFN) substrate. Wire-bonding is used to realize the electrical connections and the compressive plastic moulding is employed to achieve the packaging of the sensors. The robust and reliability of the package are also verified by several reliability tests, such as mechanical shock (MS), temperature cycling (TC), high-temperature storage (HTS) and highly accelerated stress test (HAST).

Robust Packaging For MEMS Sensors Using Plastic Moulding

We report the first demonstration of pulsed excimer laser annealing (ELA) integrated with dopant segregation method for source/drain junction engineering of gate-all-around (GAA) silicon nanowire P-FETs. It is found that the ultra-fast ELA induces higher boron pile-up at the silicide/silicon junction, resulting in performance enhancement of the devices. The laser annealing improves the average I ON by 37% as well as reduces the parasitic series resistance and improves short channel immunity of the device as compared to the devices without being treated with laser annealing.

Excimer laser-annealed dopant segregated schottky (ELA-DSS) si nanowire gate-all-around (GAA) pFET

This paper reports on a novel reconfigurable design for an aluminum nitride (AlN) MEMS resonator filter with a GHz level center frequency (f 0 ). Measurement of resonators fabricated by an AlN foundry indicates roughly linear dependence of f 0 on filter location due to process variation over a 4 mm2 die area. To improve f 0 performance yield, an Extended Statistical Element Selection (ESES) approach is implemented. The measured ESES 50 Ω matched filter demonstrates a 10× improvement in success rate for meeting the f 0 target of 1.16 GHz within a ±20 kHz tolerance.

Reconfigurable AlN resonator filter design based on extended statistical element selection

A systematic study of thickness dependent magnetization reversal process is made in Co and Ni/sub 80/Fe/sub 20/ diamond-shaped nanomagnet array fabricated using deep ultraviolet (DUV) lithography. Hysteresis loop evolution is observed as ferromagnetic film thickness increases. Flux-closure configuration is also observed for both materials at different times. A good agreement is obtained between experimental results and micromagnetic simulation.

https://ieeexplore.ieee.org/iel5/9890/31427/01463887.pdf

Flux closure configuration in ferromagnetic diamond-shaped nanomagnets

We have fabricated arrays of nanometric ferromagnetic antidot structures over a very large area using KrF lithography at 248 nm exposure wavelength. The antidot structure displays novel magnetic properties which are different from the continuous film. We have characterized in detail both the magnetic and transport properties.

Navab Singh

Papers

Robust Packaging For MEMS Sensors Using Plastic Moulding

Excimer laser-annealed dopant segregated schottky (ELA-DSS) si nanowire gate-all-around (GAA) pFET

Reconfigurable AlN resonator filter design based on extended statistical element selection

Flux closure configuration in ferromagnetic diamond-shaped nanomagnets

Fabrication of Ni/sub 80/Fe/sub 20/ antidot nanostructures using KrF lithography