The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.

Electronics based on two-dimensional materials

In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.

Metal–Oxide RRAM

Quantification of biological or biochemical processes are of utmost importance for medical, biological and biotechnological applications. However, converting the biological information to an easily processed electronic signal is challenging due to the complexity of connecting an electronic device directly to a biological environment. Electrochemical biosensors provide an attractive means to analyze the content of a biological sample due to the direct conversion of a biological event to an electronic signal. Over the past decades several sensing concepts and related devices have been developed. In this review, the most common traditional techniques, such as cyclic voltammetry, chronoamperometry, chronopotentiometry, impedance spectroscopy, and various field-effect transistor based methods are presented along with selected promising novel approaches, such as nanowire or magnetic nanoparticle-based biosensing. Additional measurement techniques, which have been shown useful in combination with electrochemical detection, are also summarized, such as the electrochemical versions of surface plasmon resonance, optical waveguide lightmode spectroscopy, ellipsometry, quartz crystal microbalance, and scanning probe microscopy. The signal transduction and the general performance of electrochemical sensors are often determined by the surface architectures that connect the sensing element to the biological sample at the nanometer scale. The most common surface modification techniques, the various electrochemical transduction mechanisms, and the choice of the recognition receptor molecules all influence the ultimate sensitivity of the sensor. New nanotechnology-based approaches, such as the use of engineered ion-channels in lipid bilayers, the encapsulation of enzymes into vesicles, polymersomes, or polyelectrolyte capsules provide additional possibilities for signal amplification. In particular, this review highlights the importance of the precise control over the delicate interplay between surface nano-architectures, surface functionalization and the chosen sensor transducer principle, as well as the usefulness of complementary characterization tools to interpret and to optimize the sensor response.

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Electrochemical Biosensors - Sensor Principles and Architectures

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Laboratoire de Génie Enzymatique et Biomoléculaire, Institut de Chimie et Biochimie Moléculaires et Supramoléculaires, 43 Boulevard du 11 Novembre 1918, Villeurbanne F-69622, France, UMR5246, Centre National de La Recherche Scientifque, Villeurbanne F-69622, France, Université de Lyon, Lyon F-69622, France, Université Lyon 1, Lyon F-69622, France, Institut National des Sciences Appliquées de Lyon, EÄ cole d’Ingénieurs, Villeurbanne F-69621, France, and EÄ cole Supérieure Chimie Physique EÄ lectronique de Lyon, Villeurbanne F-69616, France

DNA biosensors and microarrays.

We have investigated the magnetic property of magnetostatically coupled 80nm NisoFe20 nanowires fabricated using KIF lithography exposure tools, electron beam deposition and lift-off. The variation of coercivity and squareness as a function of angle was investigated. We observed that both the coercivity and the squareness are strongly dependent on the orientation of the magnetic field relative to the wire easy axis. We observed that shape anisotropy dominates the reversal processes.

http://ieeexplore.ieee.org/iel5/9589/30307/01392389.pdf

Magnetic Anisotropy in Magnetostatically Coupled Ni80Fe20 Nanowires

Electrostatic discharge (ESD) robustness of the Sub-10 nm diameter gate-all-around nanowire field-effect transistor (NW FET) was characterized and compared with sub 65nm MOS devices and FinFETs. Failure mechanisms of NW FETs subject to ESD stresses are investigated by DC current-voltage measurements carried out before and after stressing the devices with ESD equivalent pulses generated from the transmission line pulsing (TLP) tester.

Characterization and failure analysis of Sub-10 nm diameter, gate-all-around nanowire field-effect transistors subject to electrostatic discharge (ESD)

This paper reports an air-gap effect on fast release of the thin film encapsulation for packaging of MicroElectroMechanical System (MEMS) devices The air-gap structure which is defined between the cap and sacrificial layer solves the main issue of longer release time in thin film encapsulation (TFE) Sacrificial layer could be removed very fast during release step because this air-gap provide large exposed sacrificial layer surface to etch Furthermore, proper position of etch holes on the cap makes possible to protect the mass loading without any release delay The effectiveness of our scheme is shown experimentally by reducing the release time for 26 μm × 26 μm size encapsulation by a factor 6 in comparison of sidewall located channel Furthermore, theoretical calculation shows that the effectiveness of our scheme can increase dramatically for larger TFE For example, 800 μm × 800 μm size of encapsulation with air-gap in encapsulation have been fully released in 18 minutes which is 100 times less than that of sidewall located channel scheme

Air-gap in encapsulation for fast release and safe sealing

We report 248 nm KrF lithography techniques to fabricate two dimensional (2D) honey comb lattice photonic crystal on 8-inch silicon substrate . Through R-soft simulation we find maximum transverse magnetic (TM) band gap at normalized frequency of 0.322 and pillar diameter of 0.210 um for a lattice constant of 0.5 um . Experimental results show 0.214 um pillar diameter at pitch 0.5 um with good process latitude which is very close to R-soft simulation result

http://ieeexplore.ieee.org/iel5/10704/33794/01609749.pdf

KrF Lithography for Si based 2D honey comb lattice pillars

We present integrated optical phased arrays with cascaded phase shifting architectures for easy and effective electronic control. The input light is distributed to N emitters equally through a cascaded 1 × 2 splitter network with log 2 -N stages and with identical phase shifters on each stage, which enables continuous beam steering using log 2 -N voltages or one voltage. A 32-element SiN OPA with one input voltage was measured to exhibit 16° continuous steering at 13-V bias with 0.7° beam width. The same design can be easily adjusted for large element OPAs with easy and effective electronic control. © 2019 The Author(s)

Navab Singh

Papers

Magnetic Anisotropy in Magnetostatically Coupled Ni80Fe20 Nanowires

Characterization and failure analysis of Sub-10 nm diameter, gate-all-around nanowire field-effect transistors subject to electrostatic discharge (ESD)

Air-gap in encapsulation for fast release and safe sealing

KrF Lithography for Si based 2D honey comb lattice pillars

Silicon Nitride Optical Phased Arrays with Cascaded Phase Shifters for Easy and Effective Electronic Control