N
Navab Singh
Researcher at Agency for Science, Technology and Research
Publications - 355
Citations - 8869
Navab Singh is an academic researcher from Agency for Science, Technology and Research. The author has contributed to research in topics: Nanowire & CMOS. The author has an hindex of 44, co-authored 346 publications receiving 7946 citations. Previous affiliations of Navab Singh include Singapore Science Park & National University of Singapore.
Papers
More filters
Journal ArticleDOI
Fabrication of large area nanomagnets
TL;DR: In this paper, a phase shift mask is used to create nanoscale patterns of very high density, by varying the focus and exposure doses, they have synthesized multiple patterns using the same mask.
Journal ArticleDOI
Partial frequency band gap in one-dimensional magnonic crystals
Mikhail Kostylev,Philip Schrader,Robert Stamps,Gianluca Gubbiotti,Giovanni Carlotti,A. O. Adeyeye,Sarjoosing Goolaup,Navab Singh +7 more
TL;DR: In this article, a model based on the Bloch wave approach was proposed for spin wave propagation in an array of magnetic stripes coupled by dynamic dipole interaction, and it was demonstrated that this structure supports propagation of discrete spin waves at any angle with respect to the stripes length.
Journal ArticleDOI
Gate-All-Around Junctionless Nanowire MOSFET With Improved Low-Frequency Noise Behavior
TL;DR: In this article, an n-type gate-all-around (GAA) junctionless nanowire field effect transistor (JL-NWFET) along with low-frequency noise (LFN) with respect to channel doping and the gate bias voltage was presented.
Journal ArticleDOI
CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach
S.C. Rustagi,Navab Singh,Wei-Wei Fang,K.D. Buddharaju,S. R. Omampuliyur,Selin H. G. Teo,C.H. Tung,Guo-Qiang Lo,N. Balasubramanian,Dim-Lee Kwong +9 more
TL;DR: In this article, the integration of gate-all-around (GAA) Si-nanowire transistors into CMOS inverters using top-down approach is demonstrated, for the first time, and the results are discussed in light of the circuit performances reported for other advanced nonclassical device architectures such as FinFETs.
Journal ArticleDOI
Micro-electro-mechanically switchable near infrared complementary metamaterial absorber
TL;DR: In this article, a micro-electro-mechanically switchable near infrared complementary metamaterial absorber was proposed, which is an out-of-plane movable microactuator.