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Nicholas E. Grant

Researcher at University of Warwick

Publications -  75
Citations -  1400

Nicholas E. Grant is an academic researcher from University of Warwick. The author has contributed to research in topics: Silicon & Passivation. The author has an hindex of 18, co-authored 58 publications receiving 1057 citations. Previous affiliations of Nicholas E. Grant include Australian National University.

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Design, fabrication and characterisation of a 24.4% efficient interdigitated back contact solar cell

TL;DR: The interdigitated back contact (IBC) solar cells developed at the Australian National University have resulted in an independently confirmed (Fraunhofer Institut fur Solare Energiesysteme (ISE) CalLab) designated-area efficiency of 24.4 ± 0.7%, featuring short-circuit current density of 41.95 µm/cm2, open circuit voltage of 703 µmV and 82.7% fill factor as discussed by the authors.
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Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon

TL;DR: In this paper, the degradation and subsequent recovery of charge carrier lifetime upon light soaking at 75 °C observed in float-zone silicon wafers were performed. But, the degradation was only observed for p-type float zone silicon wafer passivated with passivation schemes involving silicon nitride layers.
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Thermal activation and deactivation of grown-in defects limiting the lifetime of float zone silicon

TL;DR: This paper examined modern data on the use of antidepressant pills (as an implicit signal of mental distress) in 27 European nations and found that the probability of using antidepressants reaches a peak in people's late 40s, consistent with the claim that human beings experience a midlife low.
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Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon

TL;DR: In this paper, transient spectroscopy measurements on samples extracted from the center of an n-type float-zone (FZ) silicon wafer annealed at 500˚C revealed a large variety of defects with activation energies ranging between 0.16-0.36eV.
Proceedings ArticleDOI

Effect of a post-deposition anneal on Al 2 O 3 /Si interface properties

TL;DR: In this article, the influence of post-deposition anneal on the interface properties, density of negative fixed charges Q f and density of interface traps D it, was investigated and correlated to the measured minority carrier lifetime.