N
Nick Holonyak
Researcher at University of Illinois at Urbana–Champaign
Publications - 550
Citations - 13811
Nick Holonyak is an academic researcher from University of Illinois at Urbana–Champaign. The author has contributed to research in topics: Laser & Quantum well. The author has an hindex of 52, co-authored 549 publications receiving 13608 citations. Previous affiliations of Nick Holonyak include Urbana University.
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Disorder of an AlAs‐GaAs superlattice by impurity diffusion
Abstract: Data are presented showing that Zn diffusion into an AlAs‐GaAs superlattice (41 Lz∼45‐A GaAs layers, 40 LB∼150‐A AlAs layers), or into AlxGa1−xAs‐GaAs quantum‐well heterostructures, increases the Al‐Ga interdiffusion at the heterointerfaces and creates, even at low temperature (<600 °C), uniform compositionally disordered AlxGa1−xAs. For the case of the superlattice, the diffusion‐induced disordering causes a change from direct‐gap AlAs‐GaAs (Eg∼1.61 eV) to indirect‐gap AlxGa1−xAs (x∼0.77, EgX∼2.08 eV).
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Impact ionisation in multilayered heterojunction structures
TL;DR: In this paper, it was shown that in multilayered heterojunction structures the effective impact ionisation rates for electrons and holes can be very different, even if they are the same in the basic bulk materials.
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Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion
Dennis G. Deppe,Louis J. Guido,Nick Holonyak,K. C. Hsieh,Robert D. Burnham,Robert L. Thornton,Thomas L. Paoli +6 more
TL;DR: In this paper, Si3N4 masking stripes and SiO2 defect (vacancy) sources were used to realize room-temperature continuous AlxGa1−xAs−GaAs quantum well heterostructure lasers.
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Laser operation of a heterojunction bipolar light-emitting transistor
TL;DR: In this paper, the authors demonstrate the laser operation of an InGaP-GaAs-InGaAs heterojunction bipolar light-emitting transistor with AlGaAs confining layers and recombination quantum well incorporated in the p-type base region.
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Disorder of an AlAs‐GaAs superlattice by silicon implantation
TL;DR: In this article, a 126-layer AlAs-GaAs superlattice has been shown to be selectively disordered by silicon implantation, where silicon ions, implanted at 375 keV and a dose of 1014 cm−2, yield a compositionally disordered region 0.33 μm thick centered 0.7 μm below the surface.