Nick Holonyak

Abstract: Data are presented showing that Zn diffusion into an AlAs‐GaAs superlattice (41 Lz∼45‐A GaAs layers, 40 LB∼150‐A AlAs layers), or into AlxGa1−xAs‐GaAs quantum‐well heterostructures, increases the Al‐Ga interdiffusion at the heterointerfaces and creates, even at low temperature (<600 °C), uniform compositionally disordered AlxGa1−xAs. For the case of the superlattice, the diffusion‐induced disordering causes a change from direct‐gap AlAs‐GaAs (Eg∼1.61 eV) to indirect‐gap AlxGa1−xAs (x∼0.77, EgX∼2.08 eV).

TL;DR: In this paper, it was shown that in multilayered heterojunction structures the effective impact ionisation rates for electrons and holes can be very different, even if they are the same in the basic bulk materials.

TL;DR: In this paper, Si3N4 masking stripes and SiO2 defect (vacancy) sources were used to realize room-temperature continuous AlxGa1−xAs−GaAs quantum well heterostructure lasers.

TL;DR: In this paper, the authors demonstrate the laser operation of an InGaP-GaAs-InGaAs heterojunction bipolar light-emitting transistor with AlGaAs confining layers and recombination quantum well incorporated in the p-type base region.

TL;DR: In this article, a 126-layer AlAs-GaAs superlattice has been shown to be selectively disordered by silicon implantation, where silicon ions, implanted at 375 keV and a dose of 1014 cm−2, yield a compositionally disordered region 0.33 μm thick centered 0.7 μm below the surface.