Diamond power devices: state of the art, modelling, figures of merit and future perspective
Nazareno Donato,Nicolas Rouger,Julien Pernot,Julien Pernot,Julien Pernot,Giorgia Longobardi,Florin Udrea +6 more
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This article is published in Journal of Physics D.The article was published on 2020-02-27 and is currently open access. It has received 112 citations till now. The article focuses on the topics: Diamond.read more
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[Award for Best Review Paper Speech](30min.)Wide-Bandgap Semiconductor Materials: For Their Full Bloom
TL;DR: In this paper, issues of wide-bandgap semiconductors to be addressed in their basic properties are examined toward their?full bloom? and other widebandgap materials such as diamond and oxides are attracting focusing interest due to their promising functions especially for power devices.
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Structure, Properties and Applications of Two-Dimensional Hexagonal Boron Nitride.
Soumyabrata Roy,Xiang Zhang,Anand B. Puthirath,Ashokkumar Meiyazhagan,Sohini Bhattacharyya,Muhammad M. Rahman,Ganguli Babu,Sandhya Susarla,Sreehari K. Saju,Mai Kim Tran,Lucas M. Sassi,M. A. S. R. Saadi,Jiawei Lai,Onur Sahin,Seyed Mohammad Sajadi,Bhuvaneswari Dharmarajan,Devashish Salpekar,Nithya Chakingal,Abhijit Baburaj,Xinting Shuai,Aparna Adumbumkulath,Kristen A. Miller,Jessica M Gayle,Alec Ajnsztajn,Thibeorchews Prasankumar,Vijay Vedhan Jayanthi Harikrishnan,Ved Ojha,Harikishan Kannan,Ali Zein Khater,Zhenwei Zhu,Sathvik Ajay Iyengar,Pedro A. S. Autreto,Pedro A. S. Autreto,Eliezer Fernando Oliveira,Eliezer Fernando Oliveira,Guanhui Gao,A. Glen Birdwell,Mahesh R. Neupane,Tony Ivanov,Jaime Taha-Tijerina,Jaime Taha-Tijerina,Jaime Taha-Tijerina,Ram Manohar Yadav,Sivaram Arepalli,Robert Vajtai,Pulickel M. Ajayan +45 more
TL;DR: In this paper, the structural, electrical, mechanical, optical, and thermal properties of 2D hexagonal boron nitride (h-BN) have been extensively studied.
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Progress in semiconductor diamond photodetectors and MEMS sensors
TL;DR: Diamond with an ultra-wide bandgap shows intrinsic performance that is extraordinarily superior to those of the currently available wide-bandgap semiconductors for deep-ultraviolet (DUV) photoelectronic applications as discussed by the authors.
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Ultra-wide bandgap semiconductor Ga2O3 power diodes
Jincheng Zhang,Pengfei Dong,Kui Dang,Yan Zhang,Qinglong Yan,Hu Xiang,Jie Sun,Zhihong Liu,Mengwei Si,Jiacheng Gao,Moufu Kong,Hong Zhou,Yue Hao +12 more
TL;DR: In this paper , a Ga2O3 heterojunction PN diodes with holes injection was proposed to induce conductivity modulation and low resistance in a low-doping Ga 2O3 material.
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(Ultra)Wide-Bandgap Vertical Power FinFETs
Yuhao Zhang,Tomas Palacios +1 more
TL;DR: A comprehensive tutorial and review of the background and recent advances in widebandgap and ultrawide-bandgap (UWBG) vertical power FinFETs is provided in this article.
References
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Mos (Metal Oxide Semiconductor) Physics and Technology
TL;DR: In this article, the authors present a method for extracting interface trap properties from the conductance of a metal oxide Silicon Capacitor at intermediate and high frequency intervals, and demonstrate that these properties can be used for charge trapping in the oxide.
Journal ArticleDOI
Band offsets of wide-band-gap oxides and implications for future electronic devices
TL;DR: In this paper, the Schottky barrier heights and band offsets for high dielectric constant oxides on Pt and Si were calculated and good agreement with experiment is found for barrier heights.
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Fundamentals of Power Semiconductor Devices
TL;DR: In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.