N
Nicolas Wyrsch
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 152
Citations - 4899
Nicolas Wyrsch is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Amorphous silicon & Silicon. The author has an hindex of 27, co-authored 140 publications receiving 4503 citations. Previous affiliations of Nicolas Wyrsch include University of Neuchâtel.
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Journal ArticleDOI
Amorphous silicon based betavoltaic devices
Nicolas Wyrsch,Yannick Riesen,Andrea De Franco,S. Dunand,H. Kind,S. Schneider,Christophe Ballif +6 more
TL;DR: In this paper, the degradation behavior differs from sample to sample as well as from published results in the literature, suggesting an effect of tritium rather than a creation of defects by beta particles.
Proceedings ArticleDOI
Advanced Light-Trapping in Thin-Film Silicon Solar Cells
TL;DR: In this paper, light-trapping schemes are essential for high efficiency thin-film Silicon devices and an optimum textured of the TCO layers and a high optical transparency are necessary for highest efficiency.
Journal ArticleDOI
Quantum efficiency measurement of n–i–p a-Si:H photodiode array on CMOS circuit for positron emission tomography (PET)
A. Nardulli,Matthieu Despeisse,Günther Dissertori,S. Dunand,Pierre Jarron,Werner Lustermann,D. Moraes,D. Schinzel,Nicolas Wyrsch +8 more
TL;DR: In this paper, a photo- sensor based on vertically integrating an hydrogenated amorphous silicon (a-Si:H) film on a pixel readout chip is proposed, which is deposited with a n-i-p diode structure.
Demand Side Management for Enhanced Integration of Photovoltaics into Grid
TL;DR: In this paper, a field study on more than 100 households was performed to evaluate the share of electric consumption that could be easily shifted to the maximum production hours of photovoltaic (PV) systems.
Journal ArticleDOI
Transport Path in Hydrogenated Microcrystalline Silicon
TL;DR: In this article, a PVLAB-LAB-CONF-2002-013 Record created on 2009-02-10, modified on 2017-05-10 is used for the IMT-NE.