N
Nicolas Wyrsch
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 152
Citations - 4899
Nicolas Wyrsch is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Amorphous silicon & Silicon. The author has an hindex of 27, co-authored 140 publications receiving 4503 citations. Previous affiliations of Nicolas Wyrsch include University of Neuchâtel.
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Structural Properties and Electronic Transport in Intrinsic Microcrystalline Silicon Deposited by the VHF-GD Technique
TL;DR: In this paper, a series of microcrystalline samples was deposited by the very high frequency glow discharge (VHF-GD) technique, with various input powers while keeping all the other parameters of deposition constant.
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The "Micromorph" cell: a New Way to High-Efficiency-Low-Temperature Crystalline Silicon Thin-Film Cell Manufacturing ?
Herbert Keppner,Pedro Torres,Johannes Meier,R. Platz,Diego Fischer,Ulrich Kroll,S. Dubail,J. A. Anna Selvan,N. Pellaton Vaucher,Y. Ziegler,R. Tscharner,Ch. Hof,N. Beck,M. Goetz,P. Pernet,M. Goerlitzer,Nicolas Wyrsch,J. Veuille,J. Cuperus,Arvind Shah,J. Pohl +20 more
TL;DR: In this article, the IMT-NE Number: 235 Reference PV-LAB-CONF-1997-006 Record created on 2009-02-10, modified on 2017-05-10
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Microcrystalline n-i-p solar cells deposited at 10 Å/s by VHF-GD
L. Feitknecht,Oliver Kluth,Y. Ziegler,X. Niquille,Pedro Torres,Johannes Meier,Nicolas Wyrsch,Arvind Shah +7 more
TL;DR: In this article, a thin-film micro-crystalline silicon solar cells were fabricated at high deposition rates on back-reflectors with optimized light-scattering capabilities, achieving a conversion efficiency of 7.4 angstroms/s.
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Plastic and elastic strain fields in GaAs/Si core-shell nanowires.
Sonia Conesa-Boj,Francesca Boioli,Eleonora Russo-Averchi,S. Dunand,Martin Heiss,Daniel Rüffer,Nicolas Wyrsch,Christophe Ballif,Leo Miglio,Anna Fontcuberta i Morral +9 more
TL;DR: This work combines geometrical phase analysis with finite element strain simulations to quantify and determine the origin of the lattice distortion in core-shell nanowire structures and quantifies their impact with the strain field map.
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Radiation hardness of amorphous silicon particle sensors
Nicolas Wyrsch,C. Miazza,S. Dunand,Christophe Ballif,Arvind Shah,Matthieu Despeisse,D. Moraes,F. Powolny,Pierre Jarron +8 more
TL;DR: In this article, a-Si:H diodes with a thickness of 1.1 and 32.6 lm were used for high-energy proton beam irradiation.