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Ninoslav Stojadinovic
Researcher at University of Niš
Publications - 134
Citations - 1337
Ninoslav Stojadinovic is an academic researcher from University of Niš. The author has contributed to research in topics: Threshold voltage & Gate oxide. The author has an hindex of 19, co-authored 134 publications receiving 1266 citations. Previous affiliations of Ninoslav Stojadinovic include Serbian Academy of Sciences and Arts.
Papers
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Analysis of CMOS transistor instabilities
TL;DR: In this paper, a method for separation and calculation of gate oxide and surface state charges in CMOS transistors has been developed, leading to a significant improvement of the analysis of CMOS integrated circuit instabilities.
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Logic and Computer Design Fundamentals
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Charge-pumping characterization of SiO/sub 2//Si interface in virgin and irradiated power VDMOSFETs
TL;DR: In this article, the applicability of charge-pumping technique to characterize the oxide/silicon interface in standard power VDMOS transistors is studied, and the results show that the measurements can be carried out in the sub-threshold region.
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Negative bias temperature instability mechanisms in p-channel power VDMOSFETs
Ninoslav Stojadinovic,Danijel Dankovic,Snezana Djoric-Veljkovic,Vojkan Davidovic,Ivica Manic,Snezana Golubovic +5 more
TL;DR: The observed power low time dependencies of threshold voltage shifts are found to be affected mostly by the oxide trapped charge, and the model that explains experimental data is discussed in details.
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The determination of zero temperature coefficient point in CMOS transistors
TL;DR: In this paper, the optimal gate bias which ensures the drain current to be temperature independent is derived for both linear and saturation regions of MOS transistor operation, and the expression for the linear region successfully accounts for the effect of dependence of the zero temperature coefficient (ZTC) point on the drain bias.