Transparent conductors—A status review

We review work on In2O3:Sn films prepared by reactive e‐beam evaporation of In2O3 with up to 9 mol % SnO2 onto heated glass. These films have excellent spectrally selective properties when the deposition rate is ∼0.2 nm/s, the substrate temperature is ≳150 °C, and the oxygen pressure is ∼5×10−4 Torr. Optimized coatings have crystallite dimensions ≳50 nm and a C‐type rare‐earth oxide structure. We cover electromagnetic properties as recorded by spectrophotometry in the 0.2–50‐μm range, by X‐band microwave reflectance, and by dc electrical measurements. Hall‐effect data are included. An increase of the Sn content is shown to have several important effects: the semiconductor band gap is shifted towards the ultraviolet, the luminous transmittance remains high, the infrared reflectance increases to a high value beyond a certain wavelength which shifts towards the visible, phonon‐induced infrared absorption bands vanish, the microwave reflectance goes up, and the dc resisitivity drops to ∼2×10−4 Ω cm. The corre...

Evaporated Sn‐doped In2O3 films: Basic optical properties and applications to energy‐efficient windows

Tin doped indium oxide (ITO) films are highly transparent in the visible region, exhibiting high reflectance in the infrared region, and having nearly metallic conductivity. Owing to this unusual combination of electrical and optical properties, this material is widely applied in optoelectronic devices. The association of these properties in a single material explains the vast domain of its applicability and the diverse production methods which have emerged. Although the different properties of tin doped indium oxide in the film form are interdependent, this article mainly focuses on the electrical aspects. Detailed description of the conduction mechanism and the main parameters that control the conductivity is presented. On account of the large varieties and differences in the fabrication techniques, the electrical properties of ITO films are discussed and compared within each technique.

/pdf/tin-doped-indium-oxide-thin-films-electrical-properties-1emmfeswwg.pdf

Tin doped indium oxide thin films: Electrical properties

Noncarbon support materials for polymer electrolyte membrane fuel cell electrocatalysts.

Versatility of chemical spray pyrolysis technique

The preparation, properties and applications of silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition

Structural, optical and photoluminescence properties of electron beam evaporated CdSe1−xTex films

Structural and optical properties of sprayed CuInS2 films

A process for producing In2O3 layers from indium is described. The preparation technique involves the thermal decomposition of InCl3 in an oxidizing atmosphere in a suitable furnace. A differential technique has been used to investigate the fundamental absorption edge in this material. The absorption data are interpreted as direct allowed (3.55 eV) and indirect forbidden (2.4 eV) transitions.

https://iopscience.iop.org/article/10.1088/0022-3727/10/13/013/pdf

O.P. Agnihotri

Papers

The preparation, properties and applications of silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition

Structural, optical and photoluminescence properties of electron beam evaporated CdSe1−xTex films

Structural and optical properties of sprayed CuInS2 films

Preparation and intrinsic absorption in the band edge in chemically sprayed In2O3 layers

Fluorine-doped SnO2 films for solar cell application