O
Oguz H. Elibol
Researcher at Intel
Publications - 57
Citations - 1440
Oguz H. Elibol is an academic researcher from Intel. The author has contributed to research in topics: Artificial neural network & Silicon. The author has an hindex of 18, co-authored 56 publications receiving 1264 citations. Previous affiliations of Oguz H. Elibol include University of Illinois at Urbana–Champaign & Amazon.com.
Papers
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Journal ArticleDOI
Micromechanical cantilever as an ultrasensitive pH microsensor
TL;DR: In this article, a pH sensor with ultra-high sensitivity based on a microcantilever structure with a lithographically-defined crosslinked copolymeric hydrogel was presented.
Proceedings Article
Flexpoint: An Adaptive Numerical Format for Efficient Training of Deep Neural Networks
Urs Köster,Tristan J. Webb,Xin Wang,Marcel Nassar,Arjun K. Bansal,William Howard Constable,Oguz H. Elibol,Scott Gray,Stewart Hall,Luke Hornof,Amir Khosrowshahi,Carey K. Kloss,Ruby J. Pai,Naveen G. Rao +13 more
TL;DR: The 16-bit Flexpoint data format as discussed by the authors is a complete replacement of 32-bit floating point format training and inference, designed to support modern deep network topologies without modifications.
Journal ArticleDOI
Integrated nanoscale silicon sensors using top-down fabrication
TL;DR: In this paper, a method to fabricate silicon nanowires at precise locations using microelectronic fabrication techniques is presented, which allows for the realization of truly integrated sensors capable of production of dense arrays.
Patent
DNA sequencing and amplification systems using nanoscale field effect sensor arrays
Rashid Bashir,Ashraf Alam,Demir Akin,Oguz H. Elibol,Bobby Reddy,Donald E. Bergstrom,Yi-Shao Liu +6 more
TL;DR: In this paper, field effect chemical sensor devices are used for chemical and/or biochemical sensing, and methods for single molecule detection are described. But they are not useful for amplification of target molecules by PCR.
Journal ArticleDOI
High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing
Bobby Reddy,Brian Dorvel,Jonghyun Go,Pradeep R. Nair,Oguz H. Elibol,Grace M. Credo,Jonathan S. Daniels,Edmond Chow,Xing Su,Madoo Varma,Muhammad A. Alam,Rashid Bashir +11 more
TL;DR: It is demonstrated that when the effective electrical silicon channel thickness is on the order of the Debye length, device response to pH is virtually independent of device width, which could help these silicon FET sensors become integral components of future silicon based Lab on Chip systems.