T
Thualfiqar Al-Sawaf
Researcher at Ferdinand-Braun-Institut
Publications - 10
Citations - 91
Thualfiqar Al-Sawaf is an academic researcher from Ferdinand-Braun-Institut. The author has contributed to research in topics: Amplifier & W band. The author has an hindex of 5, co-authored 10 publications receiving 82 citations. Previous affiliations of Thualfiqar Al-Sawaf include Leibniz Institute for Neurobiology.
Papers
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Journal ArticleDOI
SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications
Nils Weimann,D. Stoppel,M. I. Schukfeh,Maruf Hossain,Thualfiqar Al-Sawaf,B. Janke,Ralf Doerner,Siddharta Sinha,F.J. Schmuckle,Olaf Krüger,Viktor Krozer,Wolfgang Heinrich,Marco Lisker,A. Kruger,Anton Datsuk,Chafik Meliani,Bernd Tillack +16 more
TL;DR: In this paper, a wafer-level heterointegrated indium phosphide double heterobipolar transistor on silicon germanium bipolar-complementary metal oxide semiconductor (InP DHBT on SiGe BiCMOS) process is presented.
Journal ArticleDOI
Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer
Ksenia Nosaeva,Thualfiqar Al-Sawaf,Wilfred John,Dimitri Stoppel,Matthias Rudolph,F.J. Schmuckle,B. Janke,Olaf Krüger,Viktor Krozer,W. Heinrich,Nils Weimann +10 more
TL;DR: In this article, a diamond thin-film heat sink process was proposed to remove the heat generated in submicrometer indium phosphide double-heterostructure bipolar transistors (InP DHBTs).
Journal ArticleDOI
(Invited) Combining SiGe BiCMOS and InP Processing in an on-top of Chip Integration Approach
M. Lisker,Andreas Trusch,A. Kruger,Mirko Fraschke,P. Kulse,Steffen Marschmeyer,Jens Schmidt,Chafik Meliani,Bernd Tillack,Nils Weimann,T. Kraemer,Ina Ostermay,Olaf Krüger,Thomas Jensen,Thualfiqar Al-Sawaf,Viktor Krozer,Wolfgang Heinrich +16 more
TL;DR: In this paper, the influences of the wafer bonding and the finalization of the InP-DHBT process on SiGe devices were investigated, and it was found that the influences on the BiCMOS devices were rather small.
Proceedings ArticleDOI
A 200 mW InP DHBT W-band power amplifier in transferred-substrate technology with integrated diamond heat spreader
TL;DR: In this paper, a power amplifier in 800 nm transferred-substrate InP DHBT technology is presented, which has an integrated diamond heat sink layer that has significant impact on the reduction of thermal resistance.
Journal ArticleDOI
Millimeter-wave hetero-integrated sources in InP-on-BiCMOS technology
Thomas Jensen,Thualfiqar Al-Sawaf,M. Lisker,Srdjan Glisic,Mohamed Elkhouly,T. Kraemer,Ina Ostermay,Chafik Meliani,Bernd Tillack,Viktor Krozer,O. Krueger,Wolfgang Heinrich +11 more
TL;DR: In this article, a hetero-integrated InP-on-BiCMOS semiconductor (InP-DHBT) MMIC was proposed for millimeter-wave (mm-wave) signal sources.