O
Olli H. Pakarinen
Researcher at University of Helsinki
Publications - 47
Citations - 1946
Olli H. Pakarinen is an academic researcher from University of Helsinki. The author has contributed to research in topics: Ion track & Ion. The author has an hindex of 23, co-authored 46 publications receiving 1737 citations. Previous affiliations of Olli H. Pakarinen include Oak Ridge National Laboratory & Helsinki University of Technology.
Papers
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Journal ArticleDOI
Fine Structure in Swift Heavy Ion Tracks in Amorphous SiO2
Patrick Kluth,Claudia Schnohr,Olli H. Pakarinen,Flyura Djurabekova,David J. Sprouster,Raquel Giulian,Mark C Ridgway,Aidan Byrne,Christina Trautmann,David Cookson,Kai Nordlund,Marcel Toulemonde +11 more
TL;DR: The observation of a fine structure in ion tracks in amorphous SiO2 using small angle x-ray scattering measurements is reported, consistent with a frozen-in pressure wave originating from the center of the ion track as a result of a thermal spike.
Journal ArticleDOI
Towards an accurate description of the capillary force in nanoparticle-surface interactions
Olli H. Pakarinen,Adam S. Foster,Matti Paajanen,T. Kalinainen,Jukka Katainen,Ilja Makkonen,Jouko Lahtinen,Risto M. Nieminen +7 more
TL;DR: In this article, a method to numerically calculate the exact (non-circular) meniscus profile from the Kelvin equation, and compare the results of the obtained capillary force with different previous approximations and experiments is presented.
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Ionization-induced annealing of pre-existing defects in silicon carbide
Yanwen Zhang,Ritesh Sachan,Olli H. Pakarinen,Matthew F. Chisholm,Peng Liu,Haizhou Xue,William J. Weber +6 more
TL;DR: It is shown that the energy transferred to the electron system of SiC by energetic ions via inelastic ionization can effectively anneal pre-existing defects and restore the structural order.
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Towards chemical identification in atomic-resolution noncontact afm imaging with silicon tips
Adam S. Foster,A. Y. Gal,J. M. Airaksinen,Olli H. Pakarinen,Y. J. Lee,Julian D. Gale,Alexander L. Shluger,Risto M. Nieminen +7 more
TL;DR: In this article, the authors used ab initio calculations and a pure silicon tip to study the tip-surface interaction with four characteristic insulating surfaces: (i) the narrow gap TiO2 (110), (ii) the classic oxide MgO (001) surface, (iii) the ionic solid CaCO3 (10(1) over bar4) surface with molecular anion, and (iv) the wide gap CaF2 (111) surface.
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Synergy of elastic and inelastic energy loss on ion track formation in SrTiO3
William J. Weber,Eva Zarkadoula,Olli H. Pakarinen,Ritesh Sachan,Matthew F. Chisholm,Peng Liu,Haizhou Xue,Ke Jin,Yanwen Zhang +8 more
TL;DR: This work identifies a major gap in understanding on the role of defects in electronic energy dissipation and electron-phonon coupling and provides insights for creating novel interfaces and nanostructures to functionalize thin film structures, including tunable electronic, ionic, magnetic and optical properties.