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Oskar Baumgartner

Researcher at Vienna University of Technology

Publications -  83
Citations -  488

Oskar Baumgartner is an academic researcher from Vienna University of Technology. The author has contributed to research in topics: Silicon & Effective mass (solid-state physics). The author has an hindex of 11, co-authored 74 publications receiving 419 citations.

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Diagonal-transition quantum cascade detector

TL;DR: In this paper, the authors demonstrate the concept of diagonal transition for quantum cascade detectors (QCDs), where the active transition takes place between two energy levels in adjacent wells, and achieve a peak responsivity of 16.9
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A multi-purpose Schrödinger-Poisson Solver for TCAD applications

TL;DR: The Vienna Schrodinger-Poisson solver (VSP) as mentioned in this paper is a multi-purpose quantum mechanical solver for investigations on nano-scaled device structures, including gate dielectrics.
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A bi-functional quantum cascade device for same-frequency lasing and detection

TL;DR: In this article, the authors demonstrate a bi-functional quantum cascade device that detects at the same wavelength as it coherently emits, and they show how to compensate the intrinsic wavelength mismatch between the laser and the detector based on a bound-to-continuum design.
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VSP--a quantum-electronic simulation framework

TL;DR: The Vienna Schrödinger-Poisson (VSP) simulation framework for quantum-electronic engineering applications is presented, an extensive software tool that includes models for band structure calculation, self-consistent carrier concentrations including strain, mobility, and transport in transistors and heterostructure devices.
Proceedings ArticleDOI

Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations

TL;DR: In this article, an advanced simulation framework is used to analyze a recent sub-10 nm technology demonstration based on stacked nanowire transistors (NW-FETs) and find that the fabrication process introduces parasitic capacitances not present in a comparable FinFET, and the device performance is significantly affected by interface charge-induced Coulomb scattering resulting in up to 50% reduction in drain current compared to an ideal device.