O
Oskar Baumgartner
Researcher at Vienna University of Technology
Publications - 83
Citations - 488
Oskar Baumgartner is an academic researcher from Vienna University of Technology. The author has contributed to research in topics: Silicon & Effective mass (solid-state physics). The author has an hindex of 11, co-authored 74 publications receiving 419 citations.
Papers
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Journal ArticleDOI
Diagonal-transition quantum cascade detector
Peter Reininger,Benedikt Schwarz,Hermann Detz,Don MacFarland,Tobias Zederbauer,Aaron Maxwell Andrews,Werner Schrenk,Oskar Baumgartner,Hans Kosina,Gottfried Strasser +9 more
TL;DR: In this paper, the authors demonstrate the concept of diagonal transition for quantum cascade detectors (QCDs), where the active transition takes place between two energy levels in adjacent wells, and achieve a peak responsivity of 16.9
Journal ArticleDOI
A multi-purpose Schrödinger-Poisson Solver for TCAD applications
Markus Karner,Andreas Gehring,S. Holzer,Mahdi Pourfath,Martin Wagner,W. Goes,M. Vasicek,Oskar Baumgartner,C. Kernstock,Klaus Schnass,Gerhard Zeiler,Tibor Grasser,Hans Kosina,Siegfried Selberherr +13 more
TL;DR: The Vienna Schrodinger-Poisson solver (VSP) as mentioned in this paper is a multi-purpose quantum mechanical solver for investigations on nano-scaled device structures, including gate dielectrics.
Journal ArticleDOI
A bi-functional quantum cascade device for same-frequency lasing and detection
Benedikt Schwarz,Peter Reininger,Hermann Detz,Tobias Zederbauer,Aaron Maxwell Andrews,S. Kalchmair,Werner Schrenk,Oskar Baumgartner,Hans Kosina,Gottfried Strasser +9 more
TL;DR: In this article, the authors demonstrate a bi-functional quantum cascade device that detects at the same wavelength as it coherently emits, and they show how to compensate the intrinsic wavelength mismatch between the laser and the detector based on a bound-to-continuum design.
Journal ArticleDOI
VSP--a quantum-electronic simulation framework
TL;DR: The Vienna Schrödinger-Poisson (VSP) simulation framework for quantum-electronic engineering applications is presented, an extensive software tool that includes models for band structure calculation, self-consistent carrier concentrations including strain, mobility, and transport in transistors and heterostructure devices.
Proceedings ArticleDOI
Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations
Markus Karner,Oskar Baumgartner,Zlatan Stanojevic,Franz Schanovsky,G. Strof,C. Kernstock,H. W. Karner,Gerhard Rzepa,T. Grasset +8 more
TL;DR: In this article, an advanced simulation framework is used to analyze a recent sub-10 nm technology demonstration based on stacked nanowire transistors (NW-FETs) and find that the fabrication process introduces parasitic capacitances not present in a comparable FinFET, and the device performance is significantly affected by interface charge-induced Coulomb scattering resulting in up to 50% reduction in drain current compared to an ideal device.