P
P.G. McMullin
Researcher at Westinghouse Electric
Publications - 8
Citations - 273
P.G. McMullin is an academic researcher from Westinghouse Electric. The author has contributed to research in topics: Breakdown voltage & MESFET. The author has an hindex of 5, co-authored 8 publications receiving 269 citations.
Papers
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Journal ArticleDOI
Growth of large SiC single crystals
D.L. Barrett,Mchugh James Paul,H.M. Hobgood,Richard H. Hopkins,P.G. McMullin,Rowland C. Clarke,Wolfgang J. Choyke +6 more
TL;DR: In this paper, the authors have grown 6H-polytype SiC single crystal boules up to 60 mm in diameter by the physical vapor transport process at 2300 o C.
Proceedings ArticleDOI
A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures
Anant K. Agarwal,R.R. Siergiej,S. Seshadri,Marvin H. White,P.G. McMullin,A.A. Burk,L.B. Rowland,C.D. Brandt,Richard H. Hopkins +8 more
TL;DR: In this article, a realistic performance projection of 4H-SiC UMOSFET structures based on electric field in the gate insulator consistent with long-term reliability of insulator is provided for the breakdown voltage in the range of 600 to 1500 V.
Journal ArticleDOI
RF performance of SiC MESFET's on high resistivity substrates
S. Sriram,Rowland C. Clarke,A.A. Burk,H.M. Hobgood,P.G. McMullin,P.A. Orphanos,R.R. Siergiej,T.J. Smith,C.D. Brandt,M.C. Driver,Richard H. Hopkins +10 more
TL;DR: In this paper, state-of-the-art SiC MESFETs showing a record high f/sub max/ of 26 GHz and RF gain of 8.5 dB at 10 GHz are described.
Journal ArticleDOI
Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power Umosfet Structures
Anant K. Agarwal,R.R. Siergiej,S. Seshadri,Marvin H. White,P.G. McMullin,Albert A. Burk,Larry B. Rowland,C.D. Brandt,Richard H. Hopkins +8 more
TL;DR: In this article, a realistic performance projection of 41H-SiC UMOSFET structures based on electric field in the gate insulator was provided for the breakdown voltage in the range of 600 to 1500 V. The authors concluded that the insulator reliability, and not the SiC, is the limiting factor and therefore the high temperature operation of these devices may not be practical.
Proceedings ArticleDOI
Advances in silicon carbide (SiC) device processing and substrate fabrication for high power microwave and high temperature electronics
M.C. Driver,Richard H. Hopkins,C.D. Brandt,D.L. Barrett,A.A. Burk,Rowland C. Clarke,G.W. Eldridge,H.M. Hobgood,Mchugh James Paul,P.G. McMullin,R.R. Siergiej,S. Sriram +11 more
TL;DR: In this article, high-power density, temperature tolerant silicon carbide (SiC) electronics offer an exceptional opportunity to increase the performance and lower the cost of many existing and emerging military and commercial products.