Journal ArticleDOI
Growth of large SiC single crystals
D.L. Barrett,Mchugh James Paul,H.M. Hobgood,Richard H. Hopkins,P.G. McMullin,Rowland C. Clarke,Wolfgang J. Choyke +6 more
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TLDR
In this paper, the authors have grown 6H-polytype SiC single crystal boules up to 60 mm in diameter by the physical vapor transport process at 2300 o C.About:
This article is published in Journal of Crystal Growth.The article was published on 1993-03-01. It has received 103 citations till now. The article focuses on the topics: Single crystal.read more
Citations
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Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
J.B. Casady,R.W. Johnson +1 more
TL;DR: In this article, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed, focusing on demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers.
Journal ArticleDOI
Materials issues in microelectromechanical systems (MEMS)
TL;DR: In this article, the status of microelectromechanical systems (MEMS) is reviewed with particular emphasis on materials issues therein, and the potential impact of materials solutions is discussed.
Journal ArticleDOI
New materials for micro-scale sensors and actuators An engineering review
Stephen A. Wilson,Renaud Jourdain,Qi Zhang,Robert A. Dorey,Christopher R. Bowen,Magnus Willander,Qamar Ul Wahab,Safaa Al-Hilli,Omer Nur,Eckhard Quandt,Christer Johansson,E. Pagounis,Manfred Kohl,Jovan Matovic,Björn Samel,Wouter van der Wijngaart,Edwin Jager,Daniel O Carlsson,Zoran Djinovic,Michael Wegener,Carmen Moldovan,Rodica Iosub,E. Abad,Michael Wendlandt,Cristina Rusu,Katrin Persson +25 more
TL;DR: In this paper, a detailed overview of developments in transducer materials technology relating to their current and future applications in micro-scale devices is provided. And a short discussion of structural polymers that are extending the range of micro-fabrication techniques available to designers and production engineers beyond the limitations of silicon fabrication technology is presented.
Journal ArticleDOI
SiC materials-progress, status, and potential roadblocks
Adrian Powell,Larry B. Rowland +1 more
TL;DR: The properties of SiC are reviewed, the current status of substrate and epitaxial growth is assessed, and the expectations for SiC in the future are outlined.
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New materials for radiation hard semiconductor dectectors
Paul J. Sellin,J. Vaitkus +1 more
TL;DR: In this paper, the authors present a review of the current status of research into new semiconductor materials for use as particle tracking detectors in very high radiation environments, carried out within the framework of the CERN RD50 collaboration, which is investigating detector technologies suitable for operation at the proposed Super-LHC facility.
References
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Journal ArticleDOI
Optimum semiconductors for high-power electronics
TL;DR: In this article, the peak electric field strength at avalanche breakdown was used as a critical material parameter for evaluating the quality of a semiconducting material for high-power electronics, and it was shown that SiC and diamond could offer significant advantages compared to either silicon or group III-V compound semiconductors for these applications.
Journal ArticleDOI
Investigation of growth processes of ingots of silicon carbide single crystals
Yu. M. Tairov,V. F. Tsvetkov +1 more
TL;DR: In this article, the possibility of producing silicon carbide single-crystalline ingots from seeds in the 1800 to 2600°C range has been established, which is very promising at low temperatures.
Journal ArticleDOI
General principles of growing large-size single crystals of various silicon carbide polytypes
Yu. M. Tairov,V. F. Tsvetkov +1 more
TL;DR: In this article, the results of studies concerned with the processes of growing large silicon carbide single crystals of only one polytype were summarized, and the conditions of growing crystals of various polytypic structures were discussed.
Journal ArticleDOI
SiC boule growth by sublimation vapor transport
TL;DR: In this paper, a review of the material properties which influence semiconductor device characteristics is presented, and recent advances in crystal growth technology leading to the preparation of 25 mm and larger wafers for “silicon-like” device fabrication processes are reviewed.
Journal ArticleDOI
Photoluminescence of Ti in four SiC polytypes
Lyle Patrick,Wolfgang J. Choyke +1 more
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Investigation of growth processes of ingots of silicon carbide single crystals
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General principles of growing large-size single crystals of various silicon carbide polytypes
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