P
Pallab Banerji
Researcher at Indian Institute of Technology Kharagpur
Publications - 57
Citations - 372
Pallab Banerji is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Waveguide & Doping. The author has an hindex of 9, co-authored 57 publications receiving 300 citations.
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Exploration of Zn resonance levels and thermoelectric properties in I-doped PbTe with ZnTe nanostructures.
TL;DR: The carrier mobility is not found to be affected by the band offset between ZnTe nanostructures and PbTe, and this is explained by the quantum tunneling of the charge carrier through the narrow offset barrier and depletion width and coherent nature of the interface boundary between the two phases.
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Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.
Souvik Kundu,Michael Clavel,Pranab Biswas,Bo Chen,Hyun Cheol Song,Prashant Kumar,Nripendra N. Halder,Mantu K. Hudait,Pallab Banerji,Mohan Sanghadasa,Shashank Priya +10 more
TL;DR: Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.
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Acoustic cavitation assisted synthesis and characterization of photoluminescent carbon quantum dots for biological applications and their future prospective
TL;DR: In this article, the acoustic cavitation assisted synthesis and characterization of photoluminescent carbon dots (PCDs) is reviewed and the influence of several operational variables on the properties of PCDs and their implementations in the biological investigation were highlighted.
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Studies on Al/ZrO2/GaAs metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 kHz–1 MHz
TL;DR: In this paper, the effect of oxide thickness on different MOS parameters was investigated using three different thicknesses of the ZrO2 layer, viz., 25, 40 and 50 nm, and it was found that S passivation resulted in both low hysteresis and high accumulation capacitance.
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Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metal-oxide-semiconductor capacitor
TL;DR: In this paper, the authors reported GaAs metal-oxide-semiconductor (MOS) capacitors with a metal organic chemical vapor deposited InP interface passivation layer (IPL) and a thin (5 nm) ZrO2 high-k dielectric.