Panagiotis Dimitrakis

TL;DR: In this article, a monolayer of organically passivated gold nanoparticles has been incorporated into a metal-insulator-semiconductor (MIS) structure, which exhibits a hysteresis in its capacitance versus voltage characteristic, the magnitude of which is dependent on the voltage sweep conditions.

TL;DR: By modification of the electrode-solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2 O5 /Pt is demonstrated, thus, bridging both mechanisms.

TL;DR: In this paper, it was shown that two-dimensional arrays of Si nanocrystals cannot be positioned closer than 5 nm to the channel by increasing the implantation energy, and that injection distances down to much smaller values can be achieved only by decreasing the nominal thickness of the gate oxide.

TL;DR: In this paper, a nonvolatile electrically erasable programmable read-only memory device using gold nanoparticles as charge storage elements deposited at room temperature by chemical processing is demonstrated. But the device exhibits significant threshold voltage shifts after application of low-voltage pulses (⩽±6 V) to the gate and has non-volatile retention time characteristics.

TL;DR: In this paper, the effect of annealing in diluted oxygen versus inert environment on the structural and electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals fabricated by very low-energy silicon implantation (1 keV) is reported.