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Konstantinos Beltsios

Researcher at University of Ioannina

Publications -  104
Citations -  1895

Konstantinos Beltsios is an academic researcher from University of Ioannina. The author has contributed to research in topics: Membrane & Ionic liquid. The author has an hindex of 21, co-authored 97 publications receiving 1679 citations.

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Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si + implantation and annealing

TL;DR: In this article, the potential of thin SiO2 oxides implanted by very low energy (1 keV) Si ions and subsequently annealed are explored with regards to their potential as active elements of memory devices.
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Alginate fibers as photocatalyst immobilizing agents applied in hybrid photocatalytic/ultrafiltration water treatment processes

TL;DR: Batch photocatalytic experiments showed that the porous, Ca alginate/TiO(2) fibers, exhibited high efficiency for the removal of methyl orange (MO) from polluted water and high MO degradation rate which was faster than that observed not only for their non-porous analogs but also of the bulk P25 TiO( 2) powder.
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Strong effect of precursor preparation on the morphology of semicrystalline phase inversion poly(vinylidene fluoride) membranes

TL;DR: In this paper, the role of precursor preparation as an overlooked important factor in the control of membrane structures obtained by the phase inversion (PI) of solutions of crystallizable polymers is examined.
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Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis

TL;DR: In this paper, the effect of annealing in diluted oxygen versus inert environment on the structural and electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals fabricated by very low-energy silicon implantation (1 keV) is reported.
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Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis

TL;DR: In this article, the dependence of implantation dose on the charge storage characteristics of large-area n-channel metaloxide-semiconductor field effect transistors with 1-keV Si+-implanted gate oxides was investigated.