P
Paul J. Tsang
Researcher at IBM
Publications - 40
Citations - 1524
Paul J. Tsang is an academic researcher from IBM. The author has contributed to research in topics: Field-effect transistor & Layer (electronics). The author has an hindex of 20, co-authored 40 publications receiving 1506 citations. Previous affiliations of Paul J. Tsang include Michigan State University.
Papers
More filters
Journal ArticleDOI
Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor
TL;DR: In this paper, a self-aligned n-regions are introduced between the channel and the n+source-drain diffusions of an IGFET to spread the high field at the drain pinchoff region and thus reduce the maximum field intensity.
Patent
Fabrication process of sub-micrometer channel length MOSFETs
Jacob Riseman,Paul J. Tsang +1 more
TL;DR: In this paper, a surface isolation pattern is formed in a semiconductor substrate which isolates regions of the semiconductor from one another, and an insulating layer which may be designated to be in part the gate dielectric layer is formed over the isolation pattern surface.
Journal ArticleDOI
Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technology
TL;DR: A fabrication process for the Lightly Doped Drain/Source Field Effect Transistor, LDDFET, that utilizes RIE produced SiO 2 sidewall spacers is described in this paper.
Journal ArticleDOI
Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect Transistor
TL;DR: In this article, a self-aligned n/sup -/ regions are introduced between the channel and the source-drain diffusions of an IGFET to spread the high field at the drain pinchoff region and thus reduce the maximum field intensity.
Patent
Method of fabricating an MOS dynamic RAM with lightly doped drain
Seiki Ogura,Paul J. Tsang +1 more
TL;DR: In this paper, a method of manufacturing LDD MOS FET RAM capable of delineating short (less than 1 micrometer) lightly doped drain regions is presented, where an N- implant is effected between gate electrodes and field oxide insulators, before the N+ implant.