Steve E. Ready

TL;DR: In this paper, the authors reported the fabrication of TFT backplanes by using jet printing as the only patterning method, and they used a regioregular polythiophene, poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene; (PQT-12) is deposited by inkjet printing and exhibits average TFT mobility of 0.06cm2∕Vs, on/off ratios of 106, and minimal bias stress.

TL;DR: In this paper, the factors determining the x-ray sensitivity of HgI2 and PbI2 as direct detector materials for large area matrix addressed X-ray image sensors are described, along with a model to explain their different properties.

TL;DR: In this article, a low temperature process for laser dehydrogenation and crystallization of hydrogenated amorphous silicon (a•Si:H) has been developed, which removes hydrogen by laser irradiations at three energy steps.

TL;DR: In this paper, a-Si direct detection x-ray image sensors with polycrystalline PbI2, and more recently with HgI2 were reported, and the performance of the detectors were investigated.

TL;DR: In this article, a model for signal generation in terms of the semiconducting properties of the materials is presented, and the authors obtain zero spatial frequency DQE values of 0.7 - 0.8 with PbI(subscript 24/ under low energy exposure conditions.